B120AF-B140AF 1.0A SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits B120AF/B130AF/B140AF Reduced Low Forward Voltage Drop (V ) Better Efficiency and F V (MAX) (V) I (mA) F R(MAX) Cooler Operation V (V) I (A) RRM O +25C +25C Reduced High-Temperature Reverse Leakage Increased 20 1 0.5 0.1 Reliability against Thermal Runaway Failure in High 30 1 0.5 0.1 40 1 0.5 0.2 Temperature Operation Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data The Schottky rectifier providing low V and excellent reverse leakage F Case: SMAF stability at high temperatures, this device is ideal for use in general Case Material: Molded Plastic, Green Molding Compound. UL rectification applications such as: Flammability Classification Rating 94V-0 Boost Diode Moisture Sensitivity: Level 1 per J-STD-020 Blocking Diode Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Recirculating Diode Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.036 grams (Approximate) SMAF Top View Ordering Information (Note 4) Part Number Case Packaging B120AF-13 SMAF 10,000/Tape & Reel B130AF-13 SMAF 10,000/Tape & Reel B140AF-13 SMAF 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See B120AF-B140AF Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol B120AF B130AF B140AF Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 20 30 40 V VRWM DC Blocking Voltage V RM Average Rectified Output Current I 1 A O Non-Repetitive Peak Forward Surge Current 8.3ms 30 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) R 95 C/W JA Typical Thermal Resistance Junction to Case (Note 5) R 45 C/W JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.455 0.50 I = 1A, T = +25C F J Forward Voltage Drop V V F 0.40 I = 1A, T = +125C F J V = 20V, T = +25C R J 0.005 0.10 B120AF 0.006 0.10 V = 30V, T = +25C R J Leakage Current (Note 6) B130AF I mA R 0.010 0.20 V = 40V, T = +25C R J B140AF 6.0 V = 40V, T = +125C R J Typical Capacitance C 50 pF V = 4.0V, f = 1MHz T R Notes: 5. Device mounted on FR-4 substrate, 0.4 x 0.5 , 2oz, single-sided, PC boards with 0.2 x 0.25 copper pad. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 B120AF-B140AF May 2017 Diodes Incorporated www.diodes.com Document number: DS39504 Rev. 2 - 2 AADDVVAANNNCCEEWE ID NP FIRNOOFRDOMURACMTTAI OTNIO N NEW PRODUCT