B150AF-B160AF 1.0A SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits B150AF/B160AF Reduced Low Forward Voltage Drop (V ) Better Efficiency and F V (MAX) (V) I (mA) F R(MAX) Cooler Operation V (V) I (A) RRM O +25C +25C Reduced High-Temperature Reverse Leakage Increased 50 1 0.65 0.10 Reliability against Thermal Runaway Failure in High 60 1 0.65 0.20 Temperature Operation Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: SMAF The Schottky rectifier providing low V and excellent reverse leakage F Case Material: Molded Plastic, Green Molding Compound. UL stability at high temperatures, this device is ideal for use in general Flammability Classification Rating 94V-0 rectification applications such as: Moisture Sensitivity: Level 1 per J-STD-020 Boost Diode Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Blocking Diode Solderable per MIL-STD-202, Method 208 Recirculating Diode Polarity: Cathode Band Weight: 0.036 grams (Approximate) SMAF Top View Ordering Information (Note 4) Part Number Case Packaging B150AF-13 SMAF 10,000/Tape & Reel B160AF-13 SMAF 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See B150AF-B160AF Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol B150AF B160AF Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 50 60 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 1 A O Non-Repetitive Peak Forward Surge Current 8.3ms 30 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) R 95 C/W JA Typical Thermal Resistance Junction to Case (Note 5) R 45 C/W JC Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.53 0.65 I = 1A, T = +25C F J Forward Voltage Drop V V F 0.50 I = 1A, T = +125C F J V = 50V, T = +25C B150AF 0.015 0.10 R J Leakage Current (Note 6) B160AF 0.02 0.20 mA IR V = 60V, T = +25C R J 7.5 V = 60V, T = +125C R J Typical Capacitance C 45 pF V = 4.0V, f = 1MHz T R Notes: 5. Device mounted on FR-4 substrate, 0.4 x 0.5 , 2oz, single-sided, PC boards with 0.2 x 0.25 copper pad. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 B150AF-B160AF May 2017 Diodes Incorporated www.diodes.com Document number: DS39505 Rev. 2 - 2 AADDVVAANNNCCEEWE ID NP FIRNOOFRDOMURACMTTAI OTNIO N NEW PRODUCT