B170AE-B1100AE Green B170BE-B1100BE 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Product Summary ( +25C) Features and Benefits Guard Ring Die Construction for Transient Protection Device V (V) I (A) V Max (V) I Max (mA) RRM O F R Ideally Suited for Automated Assembly B170AE/BE 70 1.0 0.79 0.2 Low Power Loss, High Efficiency B180AE/BE 80 1.0 0.79 0.2 For Use in Low Voltage Drop, High Frequency Inverters, Free B190AE/BE Wheeling, and Polarity Protection Application 90 1.0 0.79 0.2 B1100AE/BE Lead-Free Finish RoHS Compliant (Notes 1 & 2) 100 1.0 0.79 0.2 Halogen and Antimony Free. Green Device (Note 3) Applications Mechanical Data Polarity Protection Diode Re-Circulating Diode Case: SMA , SMB Blocking Diode Case Material: Molded Plastic.Gree Molding Compound. DC-DC UL Flammability Classification Rating 94V-0 AC-DC Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Lead Free Plating (Matte Tin Finish). Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: SMA-0.063 grams (Approximate) SMB-0.093 grams (Approximate) SMA / SMB Bottom View Top View Ordering Information (Note 4) Part Number Case Packaging B1XXAE-13 SMA 5,000/Tape & Reel B1XXXAE-13 SMA 5,000/Tape & Reel B1XXBE-13 SMB 3,000/Tape & Reel B1XXXBE-13 SMB 3,000/Tape & Reel *x = Device type, e.g. B180AE-13 (SMA package) B1100BE-13 (SMB package). Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See B170AE-B1100AE B170BE-B1100BE Marking Information (Cont.) SMB B1XXBE or B1XXXBE = Product Type Marking Code, ex: B170BE (SMB Package) YWW YWW YWW YWW = Manufacturers Code Marking YWW = Date Code Marking B1XxxXxX(xB)E Bx1xXxX(BEx) Y = Last Digit of Year (ex: 8 for 2018) WW = Week Code (01 to 53) Maximum Ratings ( T = +25C unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. B170AE B180AE B190AE B1100AE Characteristic Symbol Unit B170BE B180BE B190BE B1100BE V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 70 80 90 100 V V RWM DC Blocking Voltage V R Average Rectified Output Current I 1.0 A O Non-Repetitive Peak Forward Surge Current 8.3ms I 30 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) SMA 110 C/W R JA SMB 75 Typical Thermal Resistance Junction to Case (Note 5) SMA 55 C/W R JC SMB 40 Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.75 0.79 I = 1.0A, T = +25C F A Forward Voltage Drop V V F 0.61 I = 1.0A, T = +125C F A 0.2 Rated V , T = +25C R A Leakage Current (Note 6) mA I R 5.0 Rated V , T = +125C R A Typical Capacitance C 27 pF V = 4V, f = 1MHz T R Notes: 5. Device mounted on FR-4 substrate, 0.4 x 0.5 , 2oz, single-sided, PC boards with 0.2 x 0.25 copper pad. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 B170AE-B1100AE/B170BE-B1100BE October 2018 Diodes Incorporated www.diodes.com Document number: DS39288 Rev. 4 - 2