B170/B - B1100/B Green 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features Mechanical Data Guard Ring Die Construction for Transient Protection Case: SMA / SMB Ideally Suited for Automated Assembly Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Power Loss, High Efficiency Moisture Sensitivity: Level 1 per J-STD-020 Surge Overload Rating to 30A Peak Terminals: Lead Free Plating (Matte Tin Finish). Solderable per For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application MIL-STD-202, Method 208 High Temperature Soldering: +260C/10 Second at Terminal Polarity: Cathode Band or Cathode Notch Lead Free Finish/RoHS Compliant (Note 1) Weight: SMA 0.064 grams (Approximate) Green Molding Compound (No Halogen and Antimony) SMB 0.093 grams (Approximate) (Note 2) SMA / SMB Top View Bottom View Ordering Information (Note 3) Part Number Compliance Case Packaging B1x-13-F AEC-Q101 SMA 5,000/Tape & Reel B1xQ-13-F Automotive SMA 5,000/Tape & Reel B1xB-13-F AEC-Q101 SMB 3,000/Tape & Reel B1xBQ-13-F Automotive SMB 3,000/Tape & Reel *x = Device type, e.g. B180-13-F (SMA package) B1100B-13-F (SMB package). Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See B170/B - B1100/B Maximum Ratings ( T = +25C unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol B170/B B180/B B190/B B1100/B Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage V 70 80 90 100 V RWM DC Blocking Voltage V R RMS Reverse Voltage 49 56 63 70 V V R(RMS) 1.0 A Average Rectified Output Current T = +125C I T O Non-Repetitive Peak Forward Surge Current 8.3ms 30 A I FSM Single Half Sine-Wave Superimposed on Rated Load Repetitive Peak Reverse Current I 1.0 A RRM Thermal Characteristics Characteristic Symbol B170/B B180/B B190/B B1100/B Unit Typical Thermal Resistance Junction to Terminal (Note 4) 25 C/W R JT Operating and Storage Temperature Range -65 to +150 T T C J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition 0.79 I = 1.0A, T = +25C F A Forward Voltage Drop V - - V F 0.69 I = 1.0A, T = +100C F A - - 0.5 Rated V , T = +25C R A Leakage Current (Note 5) mA I R - - 5.0 Rated V , T = +100C R A Total Capacitance C - - 80 pF V = 4V, f = 1MHz T R Notes: 4. Valid provided that terminals are kept at ambient temperature. 5. Short duration pulse test used to minimize self-heating effect. 10 1,000 1.0 100 0.1 T = 25C J I Pulse Width = 300s F 0.01 10 0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 V , INSTANTANEOUS FORWARD VOLTAGE (V) V , DC REVERSE VOLTAGE (V) F R Fig. 1 Typical Forward Characteristics Fig. 2 Total Capacitance vs. Reverse Voltage 2 of 4 January 2015 B170/B - B1100/B Diodes Incorporated www.diodes.com Document number: DS30018 Rev. 11 - 2 I , INSTANTANEOUS FORWARD CURRENT (A) F C , TOTAL CAPACITANCE (pF) T