B2100AF Green 2.0A SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits V (MAX) (V) I (A) Reduced low forward voltage drop (V ) Better efficiency and F R(MAX) F V (V) I (A) RRM O +25C +25C cooler operation. 100 2 0.79 10 Reduced high-temperature reverse leakage Increased reliability against thermal runaway failure in high temperature operation. Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data The B2100AF is a 2A 100V single rectifier packaged in the low profile Case: SMAF SMAF package. Providing low V and excellent reverse leakage Case Material: Molded Plastic, Green Molding Compound. F stability at high temperatures, this device is ideal for use in general UL Flammability Classification Rating 94V-0 rectification applications such as: Moisture Sensitivity: Level 1 per J-STD-020 Boost Diode Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Blocking Diode Solderable per MIL-STD-202, Method 208 Recirculating Diode Polarity: Cathode Band Weight: 0.036 grams (Approximate) SMAF Top View Ordering Information (Note 4) Part Number Case Packaging B2100AF-13 SMAF 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See B2100AF Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 100 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 2 A O Non-Repetitive Peak Forward Surge Current 8.3ms 75 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) R 90 C/W JA Typical Thermal Resistance Junction to Case (Note 5) R 23 C/W JC Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.75 0.79 I = 2A, T = +25C F J Forward Voltage Drop V V F 0.60 0.65 I = 2A, T = +125C F J 10 A V = 100V, T = +25C R J Leakage Current (Note 6) I R 2 mA V = 100V, T = +125C R J Notes: 5. Device mounted on FR-4 substrate, 0.4 x 0.5 , 2oz, single-sided, PC boards with 0.2 x 0.25 copper pad. 6. Short duration pulse test used to minimize self-heating effect. SBR is a registered trademark of Diodes Incorporated. 2 of 5 B2100AF March 2015 Diodes Incorporated www.diodes.com Document number: DS37678 Rev. 3 - 2 AADDVVAANNNNCCEEEWEW ID N PP FIRRNOOOFRDDOMUURACCMTTTAI OTNIO N