BAT750TA Diodes Incorporated

BAT750 SOT23 Schottky barrier diode Summary V = 40V R I = 750mA F V < 490mV 750mA F Description A high current Schottky barrier diode in a small outline surface mount C package for applications where space is limited. Features Low V F A High current capability SOT23 package Applications N/C DC-DC converters Mobile telecoms C PCMIA A Ordering information Top view Device Reel size Tape width Quantity (inches) (mm) per reel BAT750TA 7 8 3000 Device marking 1G1 Issue 2 - May 2008 1 www.zetex.com Zetex Semiconductors plc 2008BAT750 Absolute maximum ratings Parameter Symbol Limit Unit Collector reverse voltage V 40 V R RMS reverse voltage V 28 V R(RMS) Forward current (continuous) I 750 mA F Forward voltage I = 750mA V 490 mV F F Average peak forward current DC = 50% I 1500 mA FAV Non repetitive forward current t 100 S I 12 A FSM t 8.3ms 5.5 Power dissipation T = 25C P 350 mW amb tot Typical thermal resistance, junction to ambient air R 286 C/W JA Storage temperature range T -55 to +150 C stg Junction temperature T 125 C j Electrical characteristics ( T = 25C unless otherwise stated) amb Parameter Symbol Min. Typ. Max. Unit Conditions Reverse breakdown V 40 60 V I = 300 A (BR)R R voltage (*) Forward voltage V 225 280 mV I = 50mA F F (*) 235 310 mV I = 100mA F (*) 290 350 mV I = 250mA F (*) 340 420 mV I = 500mA F (*) 390 490 mV I = 750mA F (*) 440 540 mV I = 1000mA F (*) 530 650 mV I = 1500mA F Reverse current I 50 100 AV = 30V R R Diode capacitance C 25 - pF V = 25V, f = 1.0MHz D R Reverse recovery time t 5- nsI = I = 100mA, rr F R I = 10mA rr NOTES: (*) Measured under pulsed conditions. Pulse width = 300 duty cycle 2%. Issue 2 - May 2008 2 www.zetex.com Zetex Semiconductors plc 2008