BSP75GTA Diodes Incorporated

BSP75G TM 60V self-protected low-side IntelliFET MOSFET switch Summary Continuous drain source voltage V =60V DS On-state resistance 550m SOT223 Nominal load current 1.4A (V = 5V) IN Clamping energy 550mJ Description S Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level D D power MOSFET intended as a general purpose switch. IN Note: Features The tab is connected to the drain pin, and must Short circuit protection with auto restart be electrically isolated from the source pin. Over-voltage protection (active clamp) Connection of significant copper to the tab is recommended for best thermal performance. Thermal shutdown with auto restart Over-current protection Input protection (ESD) High continuous current rating Load dump protection (actively protects load) Logic level input Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) BSP75GTA 7 12mm embossed 1,000 BSP75GTC 13 12mm embossed 4,000 Device marking BSP75G Issue 4 - May 2006 1 www.zetex.com Zetex Semiconductors plc 2006BSP75G Functional block diagram D Over voltage protection dV/dt IN limitation Over current protection Human body Logic ESD protection Over temperature protection S Applications Especially suited for loads with a high in-rush current such as lamps and motors. All types of resistive, inductive and capacitive loads in switching applications. C compatible power switch for 12V and 24V DC applications. Automotive rated. Replaces electromechanical relays and discrete circuits. Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. Issue 4 - May 2006 2 www.zetex.com Zetex Semiconductors plc 2006