DF005S DF10S
Green
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features Mechanical Data
Glass Passivated Die Construction Case: DF-S
Low Forward Voltage Drop, High Current Capability Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Surge Overload Rating to 50A Peak
Moisture Sensitivity: Level 1 per J-STD-020
Designed for Surface Mount Application
Terminals: Finish - Tin. Solderable per MIL-STD-202,
UL Listed Under Recognized Component Index, File
Method 208
Number E94661
Polarity: As Marked on Case
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Weight: 0.38 grams (Approximate)
Halogen and Antimony Free. Green Device (Note 3)
Pin Diagram
Top View
Internal Schematic
Ordering Information (Note 4)
Case Packaging
Part Number
DF-S 50/Tube
DFxS
DF-S 1500/Tape & Reel, 13-inch
DFxS-T
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DF005S DF10S
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DF DF DF DF DF DF DF
Characteristic Symbol Unit
005S 01S 02S 04S 06S 08S 10S
Peak Repetitive Reverse Voltage V
RMM
Working Peak Reverse Voltage 50 100 200 400 600 800 1000 V
V
RWM
DC Blocking Voltage
V
R
RMS Reverse Voltage V 35 70 140 280 420 560 700 V
RMS
Average Forward Rectified Current @ T = +40C I 1.0 A
A O
Non-Repetitive Peak Forward Surge Current, 8.3 ms
I 50 A
FSM
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
DF DF DF DF DF DF DF
Characteristic Symbol Unit
005S 01S 02S 04S 06S 08S 10S
Typical Thermal Resistance, Junction to Ambient (Note 6) 40 C/W
R
JA
Operating and Storage Temperature Range -65 to +150 C
TJ, TSTG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
DF DF DF DF DF DF DF
Characteristic Symbol Unit
005S 01S 02S 04S 06S 08S 10S
Forward Voltage (Per Element) @ I = 1.0A V 1.1 V
F FM
Peak Reverse Current at Rated @ T = +25C 10
A
I A
RM
500
DC Blocking Voltage (Per Element) @ T = +125C
A
2 2 2
I t Rating for Fusing (t<8.3ms) I t 10.4 A s
Typical Total Capacitance (Per Element) (Note 5) 25 pF
C
T
Notes: 5. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2
6. Thermal resistance, junction to ambient, measured on PC board with 5.0mm (0.03mm thick) land areas.
2 of 5
DF005S DF10S November 2016
Diodes Incorporated
www.diodes.com
Document number: DS17001 Rev. 17 - 2