DRDNB21D COMPLEX ARRAY FOR DUAL RELAY DRIVER Features and Benefits Mechanical Data Epitaxial Planar Die Construction Case: SOT-363 Two Pre-Biased Transistors and Two Switching Diodes, Case Material: Molded Plastic.Gree Molding Compound. UL Internally Connected in One Package Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity: Level 1 per J-STD-020 Lead Free By Design/RoHS Compliant (Note 1) Terminal Connections: See Diagram Gree Device (Note 2) Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Qualified to AEC-Q101 standards for High Reliability Weight: 0.0062 grams (approximate) R1 = R3 = 2.2k (nominal) R2 = R4 = 47k (nominal) 6 5 4 5 D1 D2 R1 R3 1 3 R1 R3 6 Q1 Q2 4 R2 R4 R2 R4 3 1 2 2 Top View Device Circuit Top View Ordering Information (Note 3) Device Packaging Shipping DRDNB21D-7 SOT-363 3000/Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc. s Green Policy can be found on our website at DRDNB21D Maximum Ratings, Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 4) P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 4) 625 C/W R JA Operating and Storage Junction Temperature Range -55 to +150 T , T C J STG Maximum Ratings, Pre-Biased NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Emitter Voltage V 50 V CC Base-Emitter Voltage V -5 to +12 V in Output Current I 100 mA O Peak Collector Current I 100 mA CM Maximum Ratings, Switching Diode T = 25C unless otherwise specified A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage 100 V V RM V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage V 75 V RWM DC Blocking Voltage V R RMS Reverse Voltage 53 V V R(RMS) Forward Continuous Current (Note 4) 500 mA I FM Average Rectified Output Current (Note 4) I 250 mA O 4.0 Non-Repetitive Peak Forward Surge Current t = 1.0s I A FSM t = 1.0s 1.0 Electrical Characteristics, Pre-Biased NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition 0.5 V V V = 5V, I = 100A l(off) CC O Input Voltage V 1.1 V V = 0.3V, I = 5mA l(on) O O Output Voltage V 0.3 V I /I = 50mA/0.25mA O(on) O l Input Current I 3.6 mA V = 5V l I Output Current I 0.5 uA V = 50V, V = 0V O(off) CC I DC Current Gain G 80 V = 5V, I = 10mA l O O Input Resistor Tolerance R1 -30 +30 % - Resistance Ratio Tolerance -20 +20 % - R2/R1 Gain-Bandwidth Product* 250 MHz f V = 10V, I = 5mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics, Switching Diode T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 5) V 75 V I = 10A (BR)R R I = 5.0mA 0.62 F 0.72 0.855 I = 10mA F Forward Voltage V V F 1.0 I = 100mA F 1.25 I = 150mA F V = 75V A R 2.5 50 A V = 75V, T = 150C R J Reverse Current (Note 5) I R 30 A V = 25V, T = 150C R J 25 nA V = 20V R Total Capacitance C 4.0 pF V = 0, f = 1.0MHz T R Reverse Recovery Time t 4.0 ns I = I = 10mA, I = 0.1 x I , R = 100 rr F R rr R L Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at