DSR8F600 Green 600V 8A HYPERFAST RECTIFIER Product Summary Features and Benefits Low V Minimizes Boost Diode Conduction Losses VRRM IO VF TYP (V) tRR max (ns) IRM TYP (A) F (V) (A) +25C +25C +25C Very Fast t Reduces MOSFET PFC Switching Losses RR 20 3.9 600 8 1.95 Soft Switching Ensures Ringing and EMI are Reduced Low Q and I Minimize Boost Diode Recovery Losses RR RM Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Application Mechanical Data Case: TO220AC The DSR8F600 Hyperfast Rectifier has been designed specifically for use as a boost diode in Power Factor Correction (PFC) Case Material: Molded Plastic, UL Flammability Classification applications. Its soft very fast switching characteristics make it ideal Rating 94V-0 for use in hard switching and Continuous Conduction Mode (CCM) Terminals: Matte Tin Finish Annealed over Copper PFC circuits. It can be used in High Output SMPS Leadframe. Solderable per MIL-STD-202, Method 208 Servers and Telecom Equipment Moisture Sensitivity: Level 1 per J-STD-020 Flat-panel TVs Terminal Connections: See Diagram Below Weight: 1.75 grams (Approximate) Base Cathode 1 1 3 Cathode Anode Package Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging DSR8F600 TO220AC 50 pieces/tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DSR8F600 Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 600 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 8 A O Non-Repetitive Peak Forward Surge Current 8.3ms 75 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Case (Note 5) R 3.4 C/W JC Typical Thermal Resistance, Junction to Ambient (Note 5) R 46 C/W JA Typical Thermal Resistance, Junction to Case (Note 6) R 1.6 C/W JC Typical Thermal Resistance, Junction to Ambient (Note 6) R 7 C/W JA Storage Temperature Range T -55 to +150 C STG Maximum Operating Junction Temperature T +150 C J Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 1.8 I = 5A, T = +25C F J Forward Voltage Drop V 1.95 2.7 V I = 8A, T = +25C F F J 1.6 I = 8A, T = +125C F J 9 80 V = 600V, T = +25C R J Leakage Current (Note 7) I A R 500 1500 VR = 500V, TJ = +100C Reverse Recovery Time t 14.6 20 ns RR I = 0.5A, I = 1.0A, I = 0.25A F R RR Reverse Recovery Time t 35 45 ns RR I = 8A, dl/dt = 300A/s, F Reverse Recovery Charges 85 nC V = 400V, T = +25C Q R J RR I = 8A, dl/dt = 300A/s, F Reverse Recovery Current I 5.9 A RM V = 400V, T = +125C R J Junction Capacitance C 9.3 pF 40.0V, 1MHz T Notes: 5. Device free standing no heat sink. 6. Device with 50mm*50mm*23mm Al heat sink. 7. Short duration pulse test used to minimize self-heating effect. 2 of 6 DSR8F600 June 2015 Diodes Incorporated www.diodes.com Document number: DS36503 Rev. 4 - 2 ADVNAENNWCEWE PD RP IORNDOFUDOCURTCM TA TION