DTH8S06D Green 8A HYPER-FAST EPITAXIAL RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V (V) I (A) t (ns) Soft, Hyper Fast Switching Capability RRM O F R RR Glass Passivated Die Construction 600 8 3.4 15 18 Especially Suited for Continuous Mode Power Factor Corrections High-Reliability and Efficiency Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen- and Antimony-Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DTH8S06D Marking Information TO220AC (Type WX) DTH8S06D = Product Type Marking Code = Manufacturers Marking YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 20 for 2020) WW = Week Code (01 to 53) Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V 600 V RRM Average Rectified Output Current 8 A IO 21 ns Reverse Recovery Time, I = 0.5A, I = 0.25A, I = 1.0A t F RR R RR Non-Repetitive Peak Forward Surge Current, t = 1ms (Note 9) 150 P I A FSM 70 Non-Repetitive Peak Forward Surge Current, t = 10ms (Note 9) P Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Notes 5, 6, 9) R 7.0 C/W JA Typical Thermal Resistance Junction to Case (Notes 5, 6, 9) 2.8 C/W R JC Typical Thermal Resistance Junction to Lead (Notes 5, 6, 9) 3.5 C/W R JL Operating and Storage Temperature Range T , T -55 to +175 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage (Note 8) 3.4 V V I = 8A, T = +25C F F J 15 V = 600V, T = +25C R J Reverse Leakage Current (Note 7) A IR 200 V = 600V, T = +125C R J Reverse Recovery Time (Note 9) 12 18 ns tRR IF = 1A, dIF/dt = -200A/s, VR = 30V Reverse Recovery Current, T = +25C (Note 9) 1.8 2.2 J A I I = 8A, dI /dt = -200A/s, V = 200V RM F F R 5 6.0 Reverse Recovery Current, T = +125C (Note 9) J Reverse Recovery Charge, T = +25C (Note 9) J 60 Q nC I = 8A, dI /dt = -200A/s, V = 200V RR F F R Reverse Recovery Charge, T = +125C (Note 9) 220 J Notes: 5. Thermal resistance test performed in accordance with JESD-51. 6. The R is measured at PIN 2 R is measured at the top center of the body. JL JC 7. Short duration pulse test used to minimize self-heating effect. 8. 300s pulse width, 2% duty cycle. 9. Guaranteed by design. 2 of 5 December 2020 DTH8S06D Diodes Incorporated www.diodes.com Document number: DS42913 Rev. 4 - 2