FRS1ME Green 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Product Summary ( T = +25C) Features and Benefits A Trr (ns) V (V) I (A) V Max (V) I Max (A) Low Profile, Small Form Factor Package RRM O F R Low Leakage Current 1000 1 1.3 5 500 Glass Passivated Die Construction Superfast Recovery Time for High-Efficiency Low Forward Voltage, Low Power Loss Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen- and Antimony-Free. Green Device (Note 3) For automotive applications requiring specific change Description control (i.e. parts qualified to AEC-Q100/101/200, PPAP The FRS1ME is a rectifier packaged in the DO-219AA package and is capable, and manufactured in IATF 16949 certified facilities), suited as a boost diode in power factor correction circuitry. For use in please contact us or your local Diodes representative. secondary rectification and freewheeling for ultra-fast switching speed FRS1ME Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 1000 V DC Blocking Voltage V R Average Rectified Output Current I 1 A O Non-Repetitive Peak Forward Surge Current 30 A IFSM 8.3ms Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case 20 C/W RJC Typical Thermal Resistance Junction to Ambient (Note 5) 110 C/W RJA Typical Thermal Resistance Junction to Lead (Note 5) 25 C/W RJL Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) 1000 V V(BR)R IR = 10A Forward Voltage VF 1.1 1.3 V IF = 1A, TJ = +25C 0.5 5 VR = 1000V, TJ = +25C Reverse Leakage Current (Note 6) A IR 20 200 V = 1000V, T = +100C R J Reverse Recovery Time t 500 ns I = 0.5A, I = 1.0A, I = 0.25A RR F R RR Typical Total Capacitance C 5 pF V = 4V, f = 1MHz T R Notes: 5. Thermal resistance test performed in accordance with JESD-51. Unit mounted on glass-epoxy substrate with 5 7 mm copper pad. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 FRS1ME December 2020 Diodes Incorporated www.diodes.com Document number: DS43107 Rev. 2 - 2