GBJ20005 - GBJ2010 20A GLASS PASSIVATED BRIDGE RECTIFIER Features Glass Passivated Die Construction GBJ High Case Dielectric Strength of 1500V RMS Dim Min Max Low Reverse Leakage Current A 29.70 30.30 Surge Overload Rating to 240A Peak B 19.70 20.30 Ideal for Printed Circuit Board Applications 17.00 18.00 C UL Listed Under Recognized Component L Index, File Number E94661 D 3.80 4.20 A M Lead Free Finish/RoHS Compliant (Note 4) K E 7.30 7.70 G 9.80 10.20 B Mechanical Data H 2.00 2.40 S N Case: GBJ I 0.90 1.10 J Case Material: Molded Plastic. UL Flammability P J 2.30 2.70 D Classification Rating 94V-0 H C K 3.0 X 45 Moisture Sensitivity: Level 1 per J-STD-020C I R L 4.40 4.80 Terminals: Plated Leads, Solderable per MIL-STD-202, 3.40 3.80 Method 208 e3 M Lead Free Plating (Tin Finish). N 3.10 3.40 G EE Polarity: Molded on Body P 2.50 2.90 Mounting: Through Hole for 6 Screw R 0.60 0.80 Mounting Torque: 5.0 in-lbs Maximum S 10.80 11.20 Marking: Type Number All Dimensions in mm Weight: 6.6 grams (approximate) T = 25C unless otherwise specified A Maximum Ratings and Electrical Characteristics Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. GBJ GBJ GBJ GBJ GBJ GBJ GBJ Characteristic Symbol Unit 20005 2001 2002 2004 2006 2008 2010 Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RWM DC Blocking Voltage V R V RMS Reverse Voltage R(RMS) 35 70 140 280 420 560 700 V Average Forward Rectified Output Current T = 110C C I 20 A O Non-Repetitive Peak Forward Surge Current, 8.3 ms single I FSM 240 A half-sine-wave superimposed on rated load Forward Voltage per element I = 10A F V 1.05 V FM Peak Reverse Current T = 25C 10 A I A R at Rated DC Blocking Voltage T = 125C 500 C 2 2 2 I t Rating for Fusing (t < 8.3 ms) (Note 1) I t 240 A s C Typical Total Capacitance per Element (Note 2) T 60 pF Typical Thermal Resistance Junction to Case (Note 3) R 0.8 C/W JC Operating and Storage Temperature Range T,T -55 to +150 C j STG Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Unit mounted on 300 x 300 x 1.6mm Cu plate heat sink. 4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS21220 Rev. 8 - 2 1 of 3 GBJ20005-GBJ2010 www.diodes.com Diodes Incorporated25 100 20 With heatsink 10 15 1.0 10 Without heatsink 5 0.1 T=25C Resistive or j Inductive load 0 25 50 75 100 125 150 0.01 0 0.4 0.8 1.2 1.6 2.0 V , INSTANTANEOUS FORWARD VOLTAGE (V) T , CASE TEMPERATURE (C) F C Fig. 1 Forward Current Derating Curve Fig.2 Typical Forward Characteristics (per element) 250 100 T=25C T=25C j j f=1MHz Single half-sine-wave 200 150 10 100 50 0 1 1 100 10 1 10 100 V , REVERSE VOLTAGE (V) NUMBER OF CYCLES AT 60 Hz R Fig.4 Typical Total Capacitance, Per Element Fig. 3 Maximum Non-Repetitive Surge Current 1000 T = 125C j 100 T = 100C j 10 T=50C j 1.0 T=25C j 0.1 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.5 Typical Reverse Characteristics DS21220 Rev. 8 - 2 2 of 3 GBJ20005-GBJ2010 www.diodes.com I , PEAK FORWARD SURGE CURRENT (A) FSM I , AVERAGE RECTIFIED CURRENT (A) O I , INSTANTANEOUS FORWARD CURRENT (A) F C , TOTAL CAPACITANCE (pF) T