GBJ6005 - GBJ610 6.0A GLASS PASSIVATED BRIDGE RECTIFIER Features Glass Passivated Die Construction GBJ High Case Dielectric Strength of 1500V RMS Dim Min Max Low Reverse Leakage Current A 29.70 30.30 Surge Overload Rating to 170A Peak B 19.70 20.30 Ideal for Printed Circuit Board Applications 17.00 18.00 C L UL Listed Under Recognized Component D 3.80 4.20 Index, File Number E94661 A M K 7.30 7.70 Lead Free Finish/RoHS Compliant (Note 4) E G 9.80 10.20 B S H 2.00 2.40 Mechanical Data N I 0.90 1.10 Case: GBJ J P D J 2.30 2.70 Case Material: Molded Plastic. UL Flammability H C Classification Rating 94V-0 K 3.0 X 45 R Moisture Sensitivity: Level 1 per J-STD-020C I L 4.40 4.80 Lead Free Plating (Tin Finish). 3.40 3.80 M Terminals: Plated Leads, Solderable per MIL-STD-202, N 3.10 3.40 Method 208 e3 G EE P 2.50 2.90 Polarity: Molded on Body R 0.60 0.80 Mounting: Through Hole for 6 Screw S 10.80 11.20 Mounting Torque: 5.0 in-lbs Maximum All Dimensions in mm Marking: Type Number Weight: 6.6 grams (approximate) T = 25C unless otherwise specified A Maximum Ratings and Electrical Characteristics Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. GBJ GBJ GBJ GBJ GBJ GBJ GBJ Characteristic Symbol Unit 6005 601 602 604 606 608 610 V Peak Repetitive Reverse Voltage RRM V 50 100 200 400 600 800 1000 V Working Peak Reverse Voltage RWM V DC Blocking Voltage R RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Forward Rectified Output Current T = 110C I C O 6.0 A Non-Repetitive Peak Forward Surge Current, 8.3 ms single I 170 A FSM half-sine-wave superimposed on rated load Forward Voltage per element I = 3.0A F V 1.0 V FM Peak Reverse Current T = 25C C 5.0 I A R at Rated DC Blocking Voltage T = 125C C 500 2 2 2 I t Rating for Fusing (t < 8.3ms) (Note 1) I t 120 A s Typical Total Capacitance per Element (Note 2) C T 55 pF R Typical Thermal Resistance Junction to Case (Note 3) JC 1.8 C/W Operating and Storage Temperature Range T,T -65 to +150 C j STG Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink. 4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS21216 Rev. 7 - 2 1 of 3 GBJ6005-GBJ610 www.diodes.com Diodes Incorporated6 10 With heatsink 5 4 1.0 3 Without heatsink 2 0.1 1 Resistive or T=25C Inductive load j 0 25 50 75 100 125 150 0.01 0 0.4 0.8 1.2 1.6 1.8 T , CASE TEMPERATURE (C) C V , INSTANTANEOUS FORWARD VOLTAGE (V) F Fig. 1 Forward Current Derating Curve Fig.2 Typical Forward Characteristics (per element) 180 100 T=25C j Single half-sine-wave f = 1MHz 160 T = 150C j 120 10 80 40 0 1 1 100 10 1 10 100 V , REVERSE VOLTAGE (V) NUMBER OF CYCLES AT 60 Hz R Fig. 3 Maximum Non-Repetitive Surge Current Fig.4 Typical Total Capacitance, Per Element 1000 100 T = 125C j T = 100C j 10 T = 50C j 1.0 T = 25C j 0.1 020 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.5 Typical Reverse Characteristics DS21216 Rev. 7 - 2 2 of 3 GBJ6005-GBJ610 www.diodes.com I , PEAK FORWARD SURGE CURRENT (A) FSM I , AVERAGE RECTIFIED CURRENT (A) O I , INSTANTANEOUS FORWARD CURRENT (A) F C , TOTAL CAPACITANCE (pF) T