GBJ8005 - GBJ810
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
Glass Passivated Die Construction
GBJ
High Case Dielectric Strength of 1500V
RMS
Dim Min Max
Low Reverse Leakage Current
A 29.70 30.30
Surge Overload Rating to 170A Peak
B 19.70 20.30
Ideal for Printed Circuit Board Applications
C 17.00 18.00
L
UL Listed Under Recognized Component Index, File Number
D 3.80 4.20
A M
E94661
K
E 7.30 7.70
Lead Free Finish/RoHS Compliant (Note 4)
G 9.80 10.20
B
S
N
H 2.00 2.40
_
Mechanical Data
I 0.90 1.10
J
P
Case: GBJ
D
2.30 2.70
J
H
Case Material: Molded Plastic. UL Flammability
C
K 3.0 X 45
R
Classification Rating 94V-0
I
L 4.40 4.80
Moisture Sensitivity: Level 1 per J-STD-020C
M 3.40 3.80
Terminals: Plated Leads, Solderable per MIL-STD-202,
Method 208 e3
N 3.10 3.40
G EE
Lead Free Plating (Tin Finish).
P 2.50 2.90
Polarity: Molded on Body
R 0.60 0.80
Mounting: Through Hole for #6 Screw
S 10.80 11.20
Mounting Torque: 5.0 in-lbs Maximum
All Dimensions in mm
Marking: Type Number
Weight: 6.6 grams (approximate)
@ T = 25C unless otherwise specified
A
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBJ GBJ GBJ GBJ GBJ GBJ GBJ
Characteristic Symbol Unit
8005 801 802 804 806 808 810
Peak Repetitive Reverse Voltage V
RRM
Working Peak Reverse Voltage V 50 100 200 400 600 800 1000 V
RWM
DC Blocking Voltage V
R
RMS Reverse Voltage V 35 70 140 280 420 560 700 V
R(RMS)
Average Forward Rectified Output Current @ T = 110C I 8.0 A
C O
Non-Repetitive Peak Forward Surge Current, 8.3ms single
I
FSM 170 A
half-sine-wave superimposed on rated load
Forward Voltage per element @ I = 4.0A V 1.0 V
F FM
Peak Reverse Current @ T = 25C 5.0
C
I A
R
500
at Rated DC Blocking Voltage @ T = 125C
C
2 2 2
I t Rating for Fusing (t < 8.3ms) (Note 1) I t 120 A s
Typical Total Capacitance per Element (Note 2) C 55 pF
T
Typical Thermal Resistance Junction to Case (Note 3) R 1.6 C/W
JC
Operating and Storage Temperature Range T,T -65 to +150 C
j STG
Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS21217 Rev. 7 - 2 1 of 3 GBJ8005-GBJ810
www.diodes.com Diodes Incorporated10 10
8
With heatsink
1.0
6
4
0.1
Without heatsink
2
T=25C
j
Resistive or
Inductive load
0.01
0
25 75
50 100 125 150 0 0.4 0.8 1.2 1.6 1.8
T , CASE TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (V)
C F
Fig. 1 Forward Current Derating Curve Fig.2 Typical Forward Characteristics (per element)
100
180
T=25C
j
Single half-sine-wave
f = 1MHz
160
T = 150C
j
120
10
80
40
1
0
1 10 100
1 10 100
V , REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
R
Fig. 3 Maximum Non-Repetitive Surge Current Fig.4 Typical Total Capacitance (per element)
1000
100
T = 125C
j
T = 100C
j
10
T=50C
j
1.0
T=25C
j
0.1
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig.5 Typical Reverse Characteristics
DS21217 Rev. 7 - 2 2 of 3 GBJ8005-GBJ810
www.diodes.com
I , PEAK FORWARD SURGE CURRENT (A)
FSM
I , AVERAGE RECTIFIED CURRENT (A)
O
I , INSTANTANEOUS FORWARD CURRENT (A)
C , TOTAL CAPACITANCE (pF) F
T