GBJ8005 - GBJ810 8.0A GLASS PASSIVATED BRIDGE RECTIFIER Features Glass Passivated Die Construction GBJ High Case Dielectric Strength of 1500V RMS Dim Min Max Low Reverse Leakage Current A 29.70 30.30 Surge Overload Rating to 170A Peak B 19.70 20.30 Ideal for Printed Circuit Board Applications C 17.00 18.00 L UL Listed Under Recognized Component Index, File Number D 3.80 4.20 A M E94661 K E 7.30 7.70 Lead Free Finish/RoHS Compliant (Note 4) G 9.80 10.20 B S N H 2.00 2.40 Mechanical Data I 0.90 1.10 J P Case: GBJ D 2.30 2.70 J H Case Material: Molded Plastic. UL Flammability C K 3.0 X 45 R Classification Rating 94V-0 I L 4.40 4.80 Moisture Sensitivity: Level 1 per J-STD-020C M 3.40 3.80 Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 e3 N 3.10 3.40 G EE Lead Free Plating (Tin Finish). P 2.50 2.90 Polarity: Molded on Body R 0.60 0.80 Mounting: Through Hole for 6 Screw S 10.80 11.20 Mounting Torque: 5.0 in-lbs Maximum All Dimensions in mm Marking: Type Number Weight: 6.6 grams (approximate) T = 25 C unless otherwise specified A Maximum Ratings and Electrical Characteristics Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. GBJ GBJ GBJ GBJ GBJ GBJ GBJ Characteristic Symbol Unit 8005 801 802 804 806 808 810 Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RWM DC Blocking Voltage V R RMS Reverse Voltage V 35 70 140 280 420 560 700 V R(RMS) Average Forward Rectified Output Current T = 110 C I 8.0 A C O Non-Repetitive Peak Forward Surge Current, 8.3ms single I FSM 170 A half-sine-wave superimposed on rated load Forward Voltage per element I = 4.0A V 1.0 V F FM Peak Reverse Current T = 25 C 5.0 C I A R 500 at Rated DC Blocking Voltage T = 125 C C 2 2 2 I t Rating for Fusing (t < 8.3ms) (Note 1) I t 120 A s Typical Total Capacitance per Element (Note 2) C 55 pF T Typical Thermal Resistance Junction to Case (Note 3) R 1.6 C/W JC Operating and Storage Temperature Range T,T -65 to +150 C j STG Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink. 4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS21217 Rev. 7 - 2 1 of 3 GBJ8005-GBJ810 www.diodes.com Diodes Incorporated10 10 8 With heatsink 1.0 6 4 0.1 Without heatsink 2 T=25C j Resistive or Inductive load 0.01 0 25 75 50 100 125 150 0 0.4 0.8 1.2 1.6 1.8 T , CASE TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (V) C F Fig. 1 Forward Current Derating Curve Fig.2 Typical Forward Characteristics (per element) 100 180 T=25C j Single half-sine-wave f = 1MHz 160 T = 150C j 120 10 80 40 1 0 1 10 100 1 10 100 V , REVERSE VOLTAGE (V) NUMBER OF CYCLES AT 60 Hz R Fig. 3 Maximum Non-Repetitive Surge Current Fig.4 Typical Total Capacitance (per element) 1000 100 T = 125C j T = 100C j 10 T=50C j 1.0 T=25C j 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.5 Typical Reverse Characteristics DS21217 Rev. 7 - 2 2 of 3 GBJ8005-GBJ810 www.diodes.com I , PEAK FORWARD SURGE CURRENT (A) FSM I , AVERAGE RECTIFIED CURRENT (A) O I , INSTANTANEOUS FORWARD CURRENT (A) C , TOTAL CAPACITANCE (pF) F T