LM4040Q AUTOMOTIVE COMPLIANT PRECISION MICROPOWER SHUNT VOLTAGE REFERENCES Description Pin Assignments The LM4040Q is a family of bandgap circuits designed to achieve precision micropower voltage references of 2.5V, 3.0V, 3.3V, 4.096V, and 5.0V. The devices are available in 0.2% B-grade, 0.5% C-grade, (Top View) LM4040 F (SOT23) and 1% D-grade initial tolerances. Cathode 3 The devices are available in small outline, SOT23 surface mount package, which is ideal for applications where space is at a premium. 1 * Excellent performance is maintained over the 60A to 15mA operating current range with a typical temperature coefficient of only 20ppm/C. 2 Anode The device is designed to be highly tolerant of capacitive loads that ToSpOT2vie3w maintain excellent stability. * Pin 1 must be left floating or connected to pin 2 This device offers a pin-for-pin compatible alternative to the industry standard LM4040 voltage reference for automotive applications. Applications Features Small Package: SOT23 Automotive Reference Voltage No Output Capacitor Required Data Acquisition Systems Output Voltage Tolerance LM4040BQ: 0.2% at +25C LM4040CQ: 0.5% at +25C LM4040DQ: 1% at +25C Low Output Noise 10Hz to 10kHz 45V RMS Wide Operating Current Range of 60A to 15mA Extended Temperature Range of -40C to +125C Low Temperature Coefficient of 100 ppm/C (max) Green Molding in SOT23 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The LM4040Q is suitable for automotive applications requiring specific change control this part is AEC-Q100 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. LM4040Q Absolute Maximum Ratings (Voltages to GND Unless Otherwise Stated) Parameter Rating Unit Continuous Reverse Current 20 mA Continuous Forward Current 10 mA Operating Junction Temperature -40 to +150 C Storage Temperature -55 to +150 C ESD Susceptibility HBM Human Body Model 4 kV CDM Charged Device Model 1 kV Caution: Stresses greater than the Absolute Maximum Ratings specified above can cause permanent damage to the device. These are stress ratings only functional operation of the device at conditions between maximum recommended operating conditions and absolute maximum ratings is not implied. Device reliability can be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and can be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices. Package Thermal Data PDIS Package JA T = +25C, T = +150C A J SOT23 380C/W 330mW Recommended Operating Conditions Characteristic Min Max Unit Reverse Current 0.06 15 mA Operating Ambient Temperature Range -40 +125 C Electrical Characteristics ( T = +25C, unless otherwise specified.) A LM4040-25Q Conditions Symbol Parameter Typ B Limits C Limits D Limits Unit (Note 4) T A Reverse Breakdown Voltage +25C 2.5 V IR = 100A +25C 5 12 25 V REF Reverse Breakdown Voltage Tolerance I = 100A -40 to +85C 21 29 49 mV R -40 to +125C 30 38 63 +25C 45 60 60 65 Minimum Operating Current -40 to +85C 65 65 70 A IRMIN -40 to +125C 68 68 73 I = 10mA 20 R Average Reverse Breakdown Voltage -40 to +125C 15 100 100 150 ppm/C VR/T IR = 1mA Temperature Coefficient 15 IR = 100A +25C 0.3 0.8 0.8 1.0 IRMIN IR -40 to +85C 1.0 1.0 1.2 1mA -40 to +125C 1.0 1.0 1.2 Reverse Breakdown Voltage Change VR/IR mV with Current +25C 2.5 6.0 6.0 8.0 1mA IR -40 to +85C 8.0 8.0 10.0 15mA -40 to +125C 8.0 8.0 10.0 Z Dynamic Output Impedance I = 1mA, f = 120Hz, I = 0.1I 0.3 0.8 0.9 1.1 R R AC R Noise Voltage 35 en IR = 100A, 10Hz < f < 10kHz VRMS Long Term Stability (Non-cumulative) 120 ppm VR t = 1000Hrs, IR = 100A Thermal Hysteresis T = -40C to = +125C 0.08 % VHYST Note: 4. Unless otherwise stated, voltages specified are relative to the Anode pin. 2 of 15 LM4040Q September 2020 Diodes Incorporated www.diodes.com Document number: DS36989 Rev. 2 - 2