MBR2545CT - MBR2560CT
Green
30A SCHOTTKY BARRIER RECTIFIER
Product Summary Features and Benefits
Schottky Barrier Chip
V (MAX) (V) I (mA)
F R(MAX)
V (V) I (A)
RRM O
@ +25C @ +25C
Guard Ring Die Construction for Transient Protection
45 15 - 0.2
Low Power Loss, High Efficiency
45 30 0.82 0.2
High Surge Capability
60 15 0.75 1.0
60 30 - 1.0
High Current Capability and Low Forward Voltage Drop
For Use in Low-Voltage, High-Frequency Inverters, Free-
Wheeling, and Polarity Protection Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2 )
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
The MBR2545CT & MBR2560CT are designed to meet the stringent
Case: TO-220AB
requirements of commercial applications, such as:
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Polarity Protection Diodes
Moisture Sensitivity: Level 1 per J-STD-020
Re-Circulating Diodes
Terminals: Finish Bright Tin.
Switching Diodes
Solderable per MIL-STD-202, Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 2.24 grams (Approximate)
Pin 1
Pin 2
Case
Pin 3
TO-220AB TO-220AB Package Pin Out
Top View Bottom Configuration
View
Ordering Information (Note 4)
Part Number Case Packaging
MBR2545CT TO-220AB 50/Tube
MBR2560CT TO-220AB 50/Tube
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
MBR2545CT - MBR2560CT
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol MBR2545CT MBR2560CT Unit
V
Peak Repetitive Reverse Voltage RRM
Working Peak Reverse Voltage 45 60 V
V
RWM
DC Blocking Voltage
V
R
RMS Reverse Voltage V 32 42 V
R(RMS)
Average Rectified Output Current @ T = +130C I 30 A
C O
Non-Repetitive Peak Forward Surge Current 8.3ms
I 150 A
FSM
Single Half Sine-Wave Superimposed on Rated Load
Peak Repetitive Reverse Surge Current (Note 7) 1.0 0.5 A
I
RRM
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 5) 1.5 C/W
R
JC
Operating and Storage Temperature Range -65 to +175 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol MBR2535CT MBR2545CT MBR2550CT MBR2560CT Unit
Forward Voltage Drop @ I = 15.0A, T = +25C
F C 0.75
0.65
@ I = 15.0A, T = +125C
F C
V
V
FM
@ I = 30.0A, T = +25C 0.82
F C
0.73
@ I = 30.0A, T = +125C
F C
Peak Reverse Current @ T = +25C
C 0.2 1.0
mA
I
RM
40 50
at Rated DC Blocking Voltage @ T = +125C
C
Typical Total Capacitance (Note 6) 750 500 pF
C
T
Notes: 5. Thermal resistance junction to case mounted on heatsink.
6. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC and per element.
7. 2.0s pulse width, f = 1.0KHz.
30 50
T = 25 C
J
I Pulse Width = 300s
F
24
10
T = 150C
J
T = 25C
J
18
1.0
12
0.1
MBR2545CT
6
MBR2560CT
0
0.01
0 50 100
150 200
0 0.2 0.4 0.6 0.8 1.0
T , CASE TEMPERATURE (C)
C
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 1 Forward Derating Curve
Fig. 2 Typical Forward Characteristics
2 of 4
MBR2545CT - MBR2560CT August 2015
Diodes Incorporated
www.diodes.com
Document number: DS31036 Rev. 7 - 2
I , AVERAGE RECTIFIED CURRENT (A)
(AV)
I , INSTANTANEOUS FORWARD CURRENT (A)
F