PAM8014AZR Diodes Incorporated

PAM8014 3.2W MONO CLASS D AUDIO AMPLIFIER Description Pin Assignments The PAM8014 is a 3.2W mono filter-less class-D amplifier with high (Top View) PSRR and differential input that eliminate noise and RF rectification. GND Features like greater than 90% efficiency and small PCB area make IN+ OUT- the PAM8014 Class-D amplifier ideal for portable applications. The A3 A1 A2 output uses a filter-less architecture minimizing the number of VDD PVDD PGND external components and PCB area whilst providing a high B1 B2 B3 performance, simple and lower cost system. IN- OUT+ SD The PAM8014 features short circuit protection and thermal shutdown. C2 C1 C3 The PAM8014 is available in U-WLB1313-9 package. U-WLB1313-9 Features Ultra Low EMI, -20dB Better Than FCC Class-B @ 300MHz High Efficiency up to 93% @2W with a 8 Speaker Applications Shutdown Current <1A 3.2W@10% THD Output with a 4 Load at 5V Supply Cellular Phones/Smart Phones Demanding Few External Components MP4/MP3 Superior Low Noise without Input VOIP Supply Voltage from 2.5V to 5.5 V Digital Photo Frame Short Circuit Protection Electronic Dictionary Thermal Shutdown Portable Game Machines Available in Space Saving U-WLB1313-9 Package Totally Lead-Free&Fully RoHS Compliant (Notes 1& 2) Halogen and Antimony Free. Green Device (Note 3) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See Pin Descriptions Pin Number Pin Name Function A1 IN+ Positive Differential Input A2 GND Ground A3 OUT- Negative BTL Output B1 VDD Power Supply B2 PVDD Power Supply B3 PGND Power Ground C1 IN- Negative Differential Input C2 EN Chip Enable C3 OUT+ Positive BTL Output Functional Block Diagram VDD RF IN+ PVDD Gate RIN OUT+ PWM Drive - Modulator + Gate RIN OUT- Drive IN- RF PGND SC EN EN UVLO Protect GND Startup Bias and OTP OSC Protection Vref Absolute Maximum Ratings (@T = +25C, unless otherwise specified.) A Symbol Parameter Value Unit V Supply Voltage (V ) 6.0 V DD DD V Input Voltage (IN+, IN-, EN) -0.3 to V +0.3 V I DD Storage Temperature -65 to +150 C TS Maximum Junction Temperature +150 C T J Recommended Operating Conditions (@T = +25C, unless otherwise specified.) A Symbol Parameter Min Max Unit V Supply Voltage 2.5 5.5 V DD T Operating Ambient Temperature Range -25 +85 C A T Junction Temperature -40 +125 C J 2 of 9 PAM8014 January 2016 Diodes Incorporated www.diodes.com Document number: DS38114 Rev. 1 - 2 NEW PRODUCT