PI4GTL2014LE Diodes Incorporated

PI4GTL2014 4-bit LVTTL to GTL transceiver Features Description The PI4GTL2014 is a 4-bit translating transceiver designed for Operates as a 4-bit GTL /GTL/GTL+ sampling receiver 3.3 V LVTTL system interface with a GTL /GTL/GTL+ bus, or as a LVTTL to GTL /GTL/GTL+ driver where GTL /GTL/GTL+ refers to the reference voltage of the 2.3 V to 3.6 V operation with 5 V tolerant LVTTL input GTL bus and the input/output voltage thresholds associated GTL input and output 3.6 V tolerant with it. Vref adjustable from 0.5 V to VCC/2 The direction pin allows the part to function as either a GTL Partial power-down permitted to LVTTL sampling receiver or as a LVTTL to GTL interface. ESD protection exceeds 2000 V HBM per JESD22-A114 The PI4GTL2014 LVTTL inputs (only) are tolerant up to 5.5 V allowing direct access to TTL or 5 V CMOS inputs. The and 1000 V CDM per JESD22-CC101 LVTTL outputs are not 5.5 V tolerant. Latch-up protection exceeds 200 mA per JESD78 The PI4GTL2014 GTL inputs and outputs operate up to 3.6 V, Package offered: TSSOP14 allowing the device to be used in higher voltage open-drain output applications. Pin Description Pin Configuration Pin Name Pin Description DIR 1 Direction control input (LVTTL) B0 2 B1 3 Data inputs/outputs (GTL) B2 5 B3 6 A0 13 A1 12 Data inputs/outputs (LVTTL) A2 10 A3 9 VREF 4 GTL reference voltage GND 7,8,11 Ground (0 V) VCC 14 Positive supply voltage PI4GTL2014 www.diodes.com January 2018 Document Number 40568 Rev1-2 Diodes Incorporated 1 PI4GTL2014 Maximum Ratings Note: Power supply ......................................................................................................... -0.5V to +4.6V Stresses greater than those listed under MAXIMUM Voltage on an I/O pin ............................................................................. GND-0.5V to +7.0V RATINGS may cause permanent damage to the Supply current .................................................................................................................. 160mA device. This is a stress rating only and functional Ground supply current ...................................................................................................... 400mA operation of the device at these or any other Total power dissipation .................................................................................................... 200mW conditions above those indicated in the operational Operation temperature ................................................................................................... -40~85 sections of this specification is not implied. Storage temperature ................................................................................................... -65~150 Exposure to absolute maximum rating conditions Maximum Junction temperature ,T j(max) .................................................................. 125 for extended periods may affect reliability. Total power dissipation ................................................................................................... 200mW PI4GTL2014 Block Diagram Figure 1: Block diagram Function Table: H = HIGH voltage level L = LOW voltage level. DIR A (LVTTL) B (GTL) H Input Output L Output Input PI4GTL2014 www.diodes.com January 2018 Document Number 40568 Rev1-2 Diodes Incorporated 2