RS1JDFQ Green 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Product Summary ( T = +25C) Features and Benefits A Glass Passivated Die Construction V (V) I (A) V Max (V) I Max (A) RRM O F R Fast Recovery Time for High Efficiency 600 1 1.3 5 Surge Overload Rating to 30A Peak High Current Capability Low Profile Design, Package Height Less than 1.1mm Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data The RS1JDFQ is a rectifier packaged in the low profile D-FLAT package. Providing fast recovery time for high efficiency, this device Case: D-FLAT is ideal for use in general applications such as: Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Reverse Protection Moisture Sensitivity: Level 1 per J-STD-020 Switching Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Blocking Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.035 grams (Approximate) D-FLAT Top View Ordering Information (Note 5) Part Number Compliance Case Packaging RS1JDFQ-13 Automotive D-FLAT 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See RS1JDFQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V R RMS Reverse Voltage V 420 V R(RMS) Average Rectified Output Current T = +100C I 1.0 A A O Non-Repetitive Peak Forward Surge Current 8.3ms I 30 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 9) R 26 C/W JT Typical Thermal Resistance, Junction to Air (Note 9) R 93 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 10) V 600 V I = 10A (BR)R R 1.1 1.3 I = 1A, T = +25C F J Forward Voltage V V F 0.94 I = 1A, T = +125C F J 5 V = 600V, T = +25C 0.25 A R J Reverse Leakage Current (Note 10) I R 0.005 mA V = 600V, T = +125C R J Reverse Recovery Time (Note 6) t 250 ns I = 0.5A, I = 1.0A, I = 0.25A RR F R RR Total Capacitance (Note 7) C 6 pF V = 4V , f = 1MHz T R DC Notes: 6. Measured with I = 0.5A, I = 1.0A, I = 0.25A. See Figure 7. F R RR 7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 8. Device mounted on FR-4 substrate, 1 1 , 2oz, single-sided, PC boards with 0.1 0.15 copper pads. 9. Device mounted on FR-4 substrate, 0.4 0.5 , 2oz, single-sided, PC boards with 0.2 0.25 copper pads. 10.Short duration pulse test used to minimize self-heating effect. 100 1.6 1.4 10 1.2 T = 85C A 1 Note 9 T = 100C A 1 0.8 T = 25C T = 125C A A Note 8 0.6 T =150C A T = -55C A 0.4 0.1 0.2 0 0.01 25 50 75 100 125 150 175 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T , AMBIENT TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (V) A F Figure 1 Forward Current Derating Curve Figure 2 Typical Forward Characteristics 2 of 5 RS1JDFQ May 2016 Diodes Incorporated www.diodes.com Document number: DS38757 Rev. 2 - 2 ADVANCED INFORMATION I , DC FORWARD CURRENT (A) F I , INSTANTANEOUS FORWARD CURRENT (A) F