RS1MDFQ Green 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V Max (V) I Max (A) Glass Passivated Die Construction RRM O F R Fast Recovery Time for High Efficiency 1,000 1 1.3 5 Surge Overload Rating to 30A Peak High Current Capability Low Profile Design, Package Height Less than 1.1mm Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications The RS1MDFQ is a rectifier packaged in the low profile D-FLAT Case: D-FLAT package. Providing fast recovery time for high efficiency, this device Case Material: Molded Plastic, Green Molding Compound. UL is ideal for use in general applications such as: Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Reverse Protection Terminals: Finish Matte Tin Annealed over Copper Leadframe. Switching Solderable per MIL-STD-202, Method 208 Blocking Polarity: Cathode Band Weight: 0.035 grams (Approximate) D-FLAT Top View Ordering Information (Note 5) Part Number Compliance Case Packaging RS1MDFQ-13 Automotive D-FLAT 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See RS1MDFQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 1,000 V V RWM DC Blocking Voltage (Note 6) V R RMS Reverse Voltage V 700 V R(RMS) Average Rectified Output Current T = +100C I 1.0 A A O Non-Repetitive Peak Forward Surge Current 8.3ms I 30 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 7) R 31 C/W JT Typical Thermal Resistance, Junction to Air (Note 7) R 83 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 8) V 1,000 V I = 10A (BR)R R 0.95 1.3 I = 1A, T = +25C F J Forward Voltage Drop V V F 0.83 I = 1A, T = +125C F J 0.2 5 V = 1,000V, T = +25C R J Leakage Current (Note 8) A I R 5 V = 1,000V, T = +125C R J I = 0.5A, I = 1.0A, I = F R RR Reverse Recovery Time t 140 500 ns RR 0.25A Total Capacitance 5 pF C V = 4.0V , f = 1MHz T R DC Notes: 6. Device mounted on FR-4 substrate, 1 x 1 , 2oz, single-sided, PC boards with 0.1 x 0.15 copper pads. 7. Device mounted on FR-4 substrate, 0.4 x 0.5 , 2oz, single-sided, PC boards with 0.2 x 0.25 copper pads. 8. Short duration pulse test used to minimize self-heating effect. 2 100 1.8 1.6 10 1.4 T = 85C Note 7 1.2 A T = 100C A 1 T = 25C 1 A T = 125C A 0.8 T = -55C T = 150C A 0.6 A 0.1 Note 6 0.4 0.2 0 0.01 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 T , AMBIENT TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (V) A F Figure 1 DC Forward Current Derating Figure 2 Typical InstantanousForward Voltage 2 of 5 May 2016 RS1MDFQ Diodes Incorporated www.diodes.com Document number: DS38756 Rev. 2 - 2 ADVANCED INFORMATION NEW PRODUCT I , DC FORWARD CURRENT (A) F I , INSTANTANEOUS FORWARD CURRENT (A) F