X-On Electronics has gained recognition as a prominent supplier of S1G-13-05-F across the USA, India, Europe, Australia, and various other global locations. S1G-13-05-F are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for S1G-13-05-F, ensuring timely deliveries around the world.

S1G-13-05-F Diodes Incorporated

S1G-13-05-F electronic component of Diodes Incorporated
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Part No.S1G-13-05-F
Manufacturer: Diodes Incorporated
Category: Unclassified
Description: S1G-13-05-F
A surface-mount Schottky diode designed for fast switching operations.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.0364 ea
Line Total: USD 182 
Availability - 0
MOQ: 5000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 5000
Multiples : 1
5000 : USD 0.0364
25000 : USD 0.0352

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Factory Pack Quantity :
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We are delighted to provide the S1G-13-05-F from our Diodes Incorporated manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S1G-13-05-F and other electronic components in the Diodes Incorporated manufacturer and beyond.

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The S1G-13-05-F is a N-Channel power MOSFET from Diodes Incorporated. It has a drain-source breakdown voltage of 40V, a drain-source on-state resistance of 0.24O, and a continuous drain current rating of 24A. It is capable of operating at is rated limits with a single pulse up to 25A and is suitable for use in a variety of applications, such as DC-DC converters and power supplies. The MOSFET comes in an Iris E-Pak TO-252 package and has an MSL rating of 1.

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
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DiodesZetex
PAM(Diodes Inc)
PER
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PERICOM SEMI
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