S1MSP1
Green
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
POWERDI123
Product Summary (@ T = +25C) Features and Benefits
A
Glass Passivated Die Construction
V (V) I (A) V Max (V) I Max (A)
RRM O F R
Ideally Suited for Automated Assembly
1,000 1.0 1.1 10
Low Profile Design, Package Height Less than 1.0mm
Low Reverse Leakage Current
Exceptional Thermal Transfer Based on Exposed Heat Sink on
the Underside of the Device
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description and Applications
Mechanical Data
The S1MSP1 is a rectifier packaged in the PowerDI123 package.
Providing high-reverse breakdown voltage and high-current capability
Case: PowerDI123
for standard rectification, this device is ideal for use in applications
Case Material: Molded Plastic, Green Molding Compound.
such as:
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Switching Mode Power Supply Applications
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
DC-DC Converter Applications
Solderable per MIL-STD-202, Method 208
AC-DC Adaptors/Chargers
Polarity: Cathode Band
Mobile Devices
Weight: 0.01 grams (Approximate)
LED Lighting
PowerDI123
Top View
Ordering Information (Note 4)
Part Number Compliance Case Packaging
S1MSP1-7 Commercial PowerDI123 3,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
S1MSP1
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
V
Peak Repetitive Reverse Voltage RRM
Working Peak Reverse Voltage 1,000 V
VRWM
DC Blocking Voltage
V
RM
RMS Reverse Voltage V 700 V
R(RMS)
Average Rectified Output Current @ T = +30C I 1.0 A
A O
Non-Repetitive Peak Forward Surge Current
25 A
I
FSM
8.3ms Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Case (Note 5) R 25 C/W
JC
Typical Thermal Resistance Junction to Ambient (Note 5) R 137 C/W
JA
Typical Thermal Resistance, Junction to Lead (Note 5) R 20 C/W
JL
Typical Thermal Resistance, Junction to Case (Note 6) R 6 C/W
JC
Typical Thermal Resistance Junction to Ambient (Note 6) R 54 C/W
JA
Typical Thermal Resistance, Junction to Lead (Note 6) R 5 C/W
JL
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V 1,000 V I = 5A
(BR)R R
Forward Voltage Drop V 0.97 1.1 V I = 1A, T = +25C
F F J
0.5 10 V = 1,000V, T = +25C
R J
Leakage Current (Note 7) I A
R
43 100
V = 1,000V, T = +125C
R J
Reverse Recovery Time t 1.2 s I = 0.5A, I = 1.0A, I = 0.25A
RR F R RR
Total Capacitance C 4 pF V = 4.0V , f = 1MHz
T R DC
Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
6. Device mounted on 1" x 1", FR-4 PCB; 2 oz. Cu pad layout as shown on Diodes website at