S2KDFQ
Green
2.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Product Summary (@T = +25C) Features and Benefits
A
V (V) I (A) V Max (V) I Max (A) Glass Passivated Die Construction
RRM O F R
Surge Overload Rating to 55A Peak
800 2 1.1 5
High Current Capability
Low-Profile Design, Package Height Less than 1.1mm
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Description and Applications
The S2KDFQ is a rectifier packaged in the low-profile D-FLAT
Case: D-FLAT
package. Providing high current capability for standard rectification,
Case Material: Molded Plastic, Green Molding Compound.
this device is ideal for use in application such as:
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Reverse Protection
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Switching
Solderable per MIL-STD-202, Method 208
Blocking
Polarity: Cathode Band
Weight: 0.036 grams (Approximate)
D-FLAT
Top View
Ordering Information (Note 5)
Part Number Compliance Case Packaging
S2KDFQ-13 Automotive D-FLAT 10,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
S2KDFQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
V
Peak Repetitive Reverse Voltage RRM
Working Peak Reverse Voltage 800 V
V
RWM
DC Blocking Voltage (Note 8)
V
R
RMS Reverse Voltage V 560 V
R(RMS)
Average Rectified Output Current @ T = +25C I 2.0 A
A O
Non-Repetitive Peak Forward Surge Current 8.3ms
I 55 A
FSM
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Terminal (Note 7) R 23 C/W
JT
Typical Thermal Resistance, Junction to Air (Note 7) R 82 C/W
JA
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@TA = +25C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 8) V 800 V I = 10A
(BR)R R
1.0 I = 1A, T = +25C
0.90 F J
0.78 I = 1A, T = +125C
F J
Forward Voltage V
V
F
0.95 1.1
I = 2A, T = +25C
F J
0.84
I = 2A, T = +125C
F J
0.12 5 A V = 800V, T = +25C
R J
Reverse Leakage Current (Note 8) I
R
0.005 mA
V = 800V, T = +125C
R J
Total Capacitance C 8 pF V = 4V , f = 1MHz
T R DC
Notes: 6. Device mounted on FR-4 substrate, 1" x 1", 2oz, single-sided, PC boards with 0.1" x 0.15" copper pads.
7. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz, single-sided, PC boards with 0.2" x 0.25" copper pads.
8. Short duration pulse test used to minimize self-heating effect.
2 of 5
S2KDFQ June 2016
Diodes Incorporated
www.diodes.com
Document number: DS38754 Rev. 2 - 2
ADVANCED INFORMATION
NEW PRODUCT