SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
A B A
Surge Overload Rating to 25A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
High Temperature Soldering: 260C/10 Second at Terminal
Lead Free Finish, RoHS Compliant (Note 3)
C
D
Mechanical Data
Case: DO-41
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
DO-41
Moisture Sensitivity: Level 1 per J-STD-020C
Dim Min Max
Terminals: Finish Bright Tin. Plated Leads - Solderable per
A
25.4
MIL-STD-202, Method 208
B
4.1 5.2
Polarity: Cathode Band
C 0.71 0.86
Mounting Position: Any
D
2.0 2.7
Ordering Information: See Last Page
All Dimensions in mm
Marking: Type Number
Weight: 0.3 grams (approximate)
@ T = 25C unless otherwise specified
A
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol SB170 SB180 SB190 SB1100 Unit
V
Peak Repetitive Reverse Voltage RRM
V
Working Peak Reverse Voltage RWM 70 80 90 100 V
V
DC Blocking Voltage R
RMS Reverse Voltage V 49 56 63 70 V
R(RMS)
Average Rectified Output Current @ T = 85C I 1.0 A
T O
Non-Repetitive Peak Forward Surge Current 8.3ms
I
single half sine-wave superimposed on rated load FSM 25 A
(JEDEC Method)
Forward Voltage @ I = 1.0A @ T = 25C V
F A FM 0.80 V
Peak Reverse Current @ T = 25C
A 0.5
I mA
RM
at Rated DC Blocking Voltage @ T = 100C 10
A
C
Typical Junction Capacitance (Note 2) j 80 pF
Typical Thermal Resistance Junction to Lead R 15 K/W
JL
Typical Thermal Resistance Junction to Ambient (Note 1) R 50 K/W
JA
Operating and Storage Temperature Range T T
j, STG -65 to +125 C
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS30116 Rev. 3 - 1 1 of 2 SB170 - SB1100
www.diodes.com Diodes Incorporated
NEW PRODUCT20
10
1.0
1.0
0.5
T=25C
j
0
0.1
25 50 75 100 125 150
0.1 0.5 0.9 1.3 1.7 2.1
T , LEAD TEMPERATURE (C)
V , INSTANTANEOUS FORWARD VOLTAGE (V)
L F
Fig.2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
1000
40
T = 25C
Single Half Sine-Wave
j
(JEDEC Method)
f = 1.0MHz
T = 150C
j
30
100
20
10
10
0
0.1 1 10 100
1 10 100
V , REVERSE VOLTAGE (V)
R
NUMBER OF CYCLES AT 60 Hz
Fig. 4 Typical Junction Capacitance
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
(Note 4)
Ordering Information
Device Packaging Shipping
SB170-A DO-41 5K/Ammo Pack
SB170-B DO-41 1K/Bulk
SB170-T DO-41 5K/Tape & Reel, 13-inch
SB180-A
DO-41 5K/Ammo Pack
SB180-B DO-41 1K/Bulk
SB180-T DO-41 5K/Tape & Reel, 13-inch
SB190-A DO-41 5K/Ammo Pack
SB190-B DO-41 1K/Bulk
SB190-T
DO-41 5K/Tape & Reel, 13-inch
SB1100-A DO-41 5K/Ammo Pack
SB1100-B DO-41 1K/Bulk
SB1100-T DO-41 5K/Tape & Reel, 13-inch
Notes: 4. For packaging details, visit our website at