SB580-T Diodes Incorporated

SB570 - SB5100 5.0A SCHOTTKY BARRIER RECTIFIER Features Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability A B A High Current Capability Surge Overload Rating to 150A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications C D Lead Free Finish, RoHS Compliant (Note 2) Mechanical Data DO-201AD Case: DO-201AD Dim Min Max Case Material: Molded Plastic. UL Flammability A 25.40 Classification Rating 94V-0 B 7.20 9.50 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Bright Tin. Plated Leads Solderable per 1.20 1.30 C MIL-STD-202, Method 208 D 4.80 5.30 Polarity: Cathode Band All Dimensions in mm Ordering Information: See Last Page Marking: Type Number Weight: 1.1 grams (approximate) T =25 C unless otherwise specified Maximum Ratings and Electrical Characteristics A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB570 SB580 SB590 SB5100 Unit V Peak Repetitive Reverse Voltage RRM V Working Peak Reverse Voltage 70 80 90 100 V RWM V DC Blocking Voltage R V RMS Reverse Voltage 49 56 63 70 V R(RMS) I Average Rectified Output Current T =80 C O 5.0 A L Non-Repetitive Peak Forward Surge Current 8.3ms I single half sine-wave superimposed on rated load 150 A FSM (JEDEC Method) Forward Voltage I = 5.0A V 0.80 V F FM Peak Reverse Current T =25 C 0.5 A I mA RM 50 at Rated DC Blocking Voltage T = 100 C A Typical Junction Capacitance (Note 1) C j 400 pF Typical Thermal Resistance Junction to Ambient R K/W JA 10 Operating and Storage Temperature Range T T -65 to +150 C j, STG Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS30135 Rev.5-2 1of3 SB570 - SB5100 www.diodes.com Diodes Incorporated40 5 Resistive or Inductive Load 4 10 3 T=100C A 2 1.0 T=25C A 1 0 0.1 025 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 0 T , LEAD TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (V) L F Fig. 1 Forward Current Derating Curve Fig.2 Typical Forward Characteristics 150 1000 T=25C Single Half-Sine-Wave A f = 1.0 Mhz (JEDEC Method) 120 90 100 60 30 0 10 1 10 100 0.1 1 10 100 V , REVERSE VOLTAGE (V) NUMBER OF CYCLES AT 60Hz R Fig. 4 Typical Junction Capacitance Fig. 3 Max Non-Repetitive Peak Fwd Surge Current 10 1 T=100C A T=75C 0.1 A 0.01 T=25C A 0.001 T=-25C A 0.0001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS30135 Rev.5-2 2of3 SB570 - SB5100 www.diodes.com I , PEAK FORWARD SURGE CURRENT (A) I AVERAGE FORWARD CURRENT (A) FSM (AV), I , INSTANTANEOUS REVERSE CURRENT (mA) R C , CAPACITANCE (pF) j I , INSTANTANEOUS FORWARD CURRENT (A) F