NOT RECOMMENDED FOR NEW DESIGN USE PDS540 SBM540 5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERMITE 3 Features Guard Ring Die Construction for Transient Protection POWERMITE 3 Low Power Loss, High Efficiency E Dim Min Max A Low Forward Voltage Drop A 4.03 4.09 G For Use in Low Voltage, High Frequency Inverters, Free P B 6.40 6.61 Wheeling, and Polarity Protection Applications 3 Lead Free Finish, RoHS Compliant (Note 2) C .889 NOM H D 1.83 NOM J B Mechanical Data E 1.10 1.14 G .178 NOM 12 Case: POWERMITE 3 H 5.01 5.17 Case Material: Molded Plastic. UL Flammability M Classification Rating 94V-0 J 4.37 4.43 D K Moisture Sensitivity: Level 1 per J-STD-020 K .178 NOM Terminals: Solderable per MIL-STD-202, Method 208 C C L L .71 .77 Lead Free Plating (Matte Tin Finish). PIN 1 M .36 .46 Polarity: See Diagram PIN 3, BOTTOMSIDE PIN 2 HEAT SINK Marking Information: See Page 3 P 1.73 1.83 Ordering Information: See Page 3 All Dimensions in mm Weight: 0.072 grams (approximate) Note: Pins 1 & 2 must be electrically connected at the printed circuit board. Maximum Ratings T = 25C unless otherwise specified A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 40 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 28 V R(RMS) Average Rectified Output Current (see also Figure 5) I 5 A O Non-Repetitive Peak Forward Surge Current I 100 A FSM 8.3ms Single half sine-wave Superimposed on Rated Load T = 90C C Typical Thermal Resistance Junction to Soldering Point R 3.2 C/W JS Operating Temperature Range -55 to +125 C T J Storage Temperature Range -55 to +150 C T STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic SymbolMin Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 1) V 40 V I = 0.5mA (BR)R R I = 5A, T = 25C 0.52 F S 0.48 0.45 I = 5A, T = 125C F S Forward Voltage V V FM 0.59 I = 10A, T = 25C F S 0.56 = 10A, T = 125C I F S 0.05 0.5 T = 25C, V = 40V S R Reverse Current (Note 1) mA I RM 2.5 20 T = 100C, V = 40V S R Total Capacitance C 250 pF f = 1.0MHz, V = 4.0V DC T R Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes. DS30297 Rev. 7 - 2 1 of 4 SBM540 Diodes Incorporated www.diodes.com NOT RECOMMENDED FOR NEW DESIGN USE PDS540 100 100 T = 125C J 10 10 T = 100C 1.0 J 1.0 T = 75C J 0.1 0.1 0.01 T = 25C J 0.001 0.01 0 510 15 20 25 30 35 40 0 0.2 0.4 0.6 0.8 V , INSTANTANEOUS FORWARD VOLTAGE (V) V , INSTANTANEOUS REVERSE VOLTAGE (V) F R Fig. 1 Typical Forward Characteristics Fig. 2 Typical Reverse Characteristics 125 1000 100 75 100 50 25 0 10 0.1 110 100 110 100 V , REVERSE VOLTAGE (V) R NUMBER OF CYCLES AT 60 Hz Fig. 4 Typical Total Capacitance Fig. 3 Max Non-Repetitive Peak Forward Surge Current vs. Reverse Voltage DS30297 Rev. 7 - 2 2 of 4 SBM540 Diodes Incorporated www.diodes.com I, PEAK FORWARD SURGE CURRENT (A) I, INSTANTANEOUS FORWARD CURRENT (A) FSM F C , TOTAL CAPACITANCE (pF) I, INSTANTANEOUS REVERSE CURRENT (mA) T R