SBR05U20LP Green 0.5A SBR SURFACE MOUNT SUPER BARRIER RECTIFIER Features Mechanical Data Ultra Low Forward Voltage Drop Case: X1-DFN1006-2 Superior Reverse Avalanche Capability Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: Cathode Dot +150C Operating Junction Temperature Terminals: Finish - NiPdAu over Copper Leadframe. Lead-Free Finish RoHS Compliant (Notes 1 & 2) Solderable per MIL-STD-202, Method 208 e4 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.001 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability X1-DFN1006-2 Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging SBR05U20LP-7 X1-DFN1006-2 3,000/Tape & Reel SBR05U20LP-7B X1-DFN1006-2 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See SBR05U20LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 20 V V RWM DC Blocking Voltage V RM RMS Reverse Voltage V 14 V R(RMS) Average Rectified Output Current (See Figure 1) I 500 mA O Non-Repetitive Peak Forward Surge Current 8.3ms I 5 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Maximum Thermal Resistance Junction to Ambient (Note 5) 134 C/W R JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) 20 - - V V I = 50A (BR)R R - 0.34 0.38 I = 0.1A, T = +25C F J - 0.25 0.28 I = 0.1A, T = +150C F J - 0.39 0.43 I = 0.2A, T = +25C F J Forward Voltage Drop V V F - 0.31 0.34 I = 0.2A, T = +150C F J - 0.47 0.50 I = 0.5A, T = +25C F J - 0.43 0.46 I = 0.5A, T = +150C F J 6 50 A V = 20V, T = +25C R J Leakage Current (Note 6) - I R 1.5 5 mA V = 20V, T = +150C R J Notes: 5. Device mounted on FR-4 substrate. 2 x 2 2oz. Copper, single sided PCB board. 6. Short duration pulse test used to minimize self-heating effect. 0.6 10,000 0.5 1,000 T = 150C A 0.4 T = 125C A 100 0.3 10 T = 85C A 0.2 T = 25C A 1 0.1 T = -55C A 0.1 0 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 I , AVERAGE FORWARD CURRENT (A) V , INSTANTANEOUS FORWARD VOLTAGE (V) F(AV) F Fig. 2 Typical Forward Characteristics Fig. 1 Forward Power Dissipation SBR is a registered trademark of Diodes Incorporated. 2 of 4 April 2015 SBR05U20LP Diodes Incorporated www.diodes.com Document number: DS31001 Rev. 6 - 2 NEW PRODUCT P , POWER DISSIPATION (W) D I , INSTANTANEOUS FORWARD CURRENT (mA) F