SBR1045D1Q 10A SBR SUPER BARRIER RECTIFIER Product Summary Features 100% Avalanche Tested. V (V) I (A) V (V) +25C I (mA) +25C Patented SBR technology provides a superior avalanche RRM O F MAX R MAX capability than schottky diodes ensuring more rugged and 45 10 0.58 0.3 reliable end applications. Reduced ultra-low forward voltage drop (VF) better efficiency and cooler operation. Reduced high temperature reverse leakage increased reliability Description and Applications against thermal runaway failure at high temperature This Super Barrier Rectifier (SBR) diode has been designed to meet Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) the stringent requirements of Automotive Applications. It is ideally Qualified to AEC-Q101 Standards for High Reliability suited to use as : Polarity Protection Diode Re-circulating Diode Mechanical Data Switching Diode Case: TO252 (DPAK) Case Material: Molded Plastic, Green Molding compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approximate) 3 Top View Polarity Ordering Information (Note 4) Part Number Compliance Case Packaging SBR1045D1Q-13 Automotive TO252 (DPAK) 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See SBR1045D1Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 45 V V RWM DC Blocking Voltage V RM RMS Reverse Voltage V 32 V R(RMS) Average Rectified Output Current I 10 A O Non-Repetitive Peak Forward Surge Current 8.3ms I 90 A FSM Single Half Sine-Wave Superimposed on Rated Load Repetitive Peak Avalanche Power (1s, +25C) 5000 W P ARM Non-Repetitive Avalanche Energy E 200 mJ AS (T = +25C, I = 12A, L = 10mH) J AS Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance R Thermal Resistance Junction to Ambient (Note 5) JA 29 C/W Thermal Resistance Junction to Case (Note 5) 3 R JC Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V 45 V I = 0.5mA (BR)R R I = 5A, T = +25C 0.42 F J 0.37 I = 5A, T = +125C F J Forward Voltage Drop V V F 0.53 0.58 I = 10A, T = +25C F J 0.50 I = 10A, T = +125C F J 150 300 A V = 45V, T = +25C R J Leakage Current (Note 6) I R 50 mA V = 45V, T = +125C R J V = 5V, f = 1MHz R Total Capacitance C 400 pF T T = +25C J 2 Notes: 5. Device mounted on polymide substrate, 240mm Copper pad, double-sided PC Board. 6. Short duration pulse test used to minimize self-heating effect. 5.0 100 4.5 10 4.0 T = 150C A 3.5 T = 125C 1 A 3.0 0.1 2.5 2.0 T = 85C 0.01 A 1.5 T = 25C A 1.0 T = -55C 0.001 A 0.5 0 0.0001 0 246 8 10 0 200 400 600 800 I , AVERAGE FORWARD CURRENT (A) V , INSTANTANEOUS FORWARD VOLTAGE (mV) F(AV) F Fig. 1 Forward Power Dissipation Fig. 2 Typical Forward Characteristics Notes:7. Polymide, 2oz. Copper 16x minimum recommended pad layout per