SBR10E45P5 Green 10A SBR SUPER BARRIER RECTIFIER PowerDI5 Product Summary ( TA = +25C) Features and Benefits V (V) I (A) V Max (V) I Max (mA) Patented Super Barrier Rectifier SBR Technology RRM O F R Ultra Low Forward Voltage Drop (V ) Helps Minimize Power 45 10 0.47 0.28 F Losses Excellent Reverse Leakage (I ) Stability at Higher Temperatures R Thermally Efficient Package for Cooler Running Applications Less than 1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Packaged in the compact thermally efficient PowerDI 5 package, the Case: PowerDI5 SBR10E45P5 provides ultra-low forward-voltage drop (V ) and Case Material: Molded Plastic, Green Molding Compound. F excellent low reverse leakage stability at high temperatures. It is ideal UL Flammability Classification Rating 94V-0 for use as a rectification, freewheeling or polarity protection diode in Moisture Sensitivity: Level 1 per J-STD-020 applications such as: Terminal Connections: See Diagram Below Weight: 0.093 grams (Approximate) >10W AC-DC Adaptors/Chargers DC-DC Converters PowerDI5 Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging SBR10E45P5-13 PowerDI5 5,000/Tape & Reel SBR10E45P5-13D (Note 5) PowerDI5 5,000/Tape & Reel SBR10E45P5-7 PowerDI5 1,500/Tape & Reel SBR10E45P5-7D (Note 5) PowerDI5 1,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See SBR10E45P5 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage V 45 V RRM DC Blocking Voltage Average Rectified Output Current I 10 A O Non-Repetitive Peak Forward Surge Current 8.3mS I 275 A FSM Parameter Symbol Value Unit Human Body Model ESD Protection ESD HBM 8 kV Machine Model ESD Protection ESD MM 400 V Caution: Stresses greater than the Absolute Maximum Ratings specified above, may cause permanent damage to the device. These are stress ratings only functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 6) R 88 C/W JA Typical Thermal Resistance Junction to Case (Note 6) R 14 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.42 0.47 I = 10A, T = +25C F A Forward Voltage Drop V V F 0.38 0.41 I = 10A, T = +125C F A V = 45V, T = +25C 0.05 0.28 R A Leakage Current (Note 7) I mA R 50 V = 45V, T = +125C R A Notes: 6. Device mounted on 1 x MRP FR-4 PC board, 2oz. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 SBR10E45P5 February 2016 Diodes Incorporated www.diodes.com Document number: DS37867 Rev. 4 - 2 NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT