SBR20E120CT Green 20A SBR SUPER BARRIER RECTIFIER Product Summary Features and Benefits Patented SBR technology provides superior avalanche capability V (MAX) (V) I (mA) F R(MAX) V (V) I (A) RRM O +25C +25C versus Schottky diodes, ensuring more rugged and reliable end 10 (Per leg) applications. 120 0.79 0.09 20 (Total) Reduced ultra-low forward voltage drop (V ) Better efficiency F and cooler operation. Reduced high temperature reverse leakage Increased reliability against thermal runaway failure in high temperature operation. Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data The SBR20E120CT provides very low V and excellent reverse F Case: TO220AB leakage stability at high temperatures. It is ideal for use as a rectifier, Case Material: Molded Plastic UL Flammability Classification freewheel diode or blocking diode in: Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe DC-DC Converters Solderable per MIL-STD-202, Method 208 AC-DC Adaptors Weight: 1.85 grams (Approximate) TO220AB TO220AB Top View Bottom View Package Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging SBR20E120CT TO220AB 50 Pieces/Tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See SBR20E120CT Maximum Ratings (Per Leg) ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage V 120 V RWM DC Blocking Voltage V RM Average Rectified Output Current Per Device (Per Leg) 10 A I O (Total) 20 Non-Repetitive Peak Forward Surge Current 8.3ms 180 A I FSM Single Half Sine-Wave Superimposed on Rated Load Symbol Parameter Ratings Unit ESD HBM Human Body Model ESD Protection 8 kV ESD MM Machine Model ESD Protection 400 V Caution: Stresses greater than the Absolute Maximum Ratings specified above, may cause permanent damage to the device. These are stress ratings only functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices. Thermal Characteristics (Per Leg) Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 5) 2 C/W R JC Typical Thermal Resistance Junction to Ambient (Note 5) R 8 C/W JA Operating and Storage Temperature Range -65 to +175 C T , T J STG Electrical Characteristics (Per Leg) ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition I = 10A, T = +25C 0.75 0.79 F J Forward Voltage Drop (Per Leg) V - 0.62 0.65 V I = 10A, T = +125C F F J 0.87 0.92 I = 20A, T = +25C F J 25 90 A V = 120V, T = +25C R J Leakage Current (Note 6) I - R 6.3 20 mA V = 120V, T = +125C R J Notes: 5. Test with Aluminum heatsink 50 x 50 x 23 mm. 6. Short duration pulse test used to minimize self-heating effect. SBR is a registered trademark of Diodes Incorporated. 2 of 5 June 2015 SBR20E120CT www.diodes.com Diodes Incorporated Document number: DS37896 Rev. 2 - 2 ADVANCED INFORMATION