SBR20U50SLP Green 20A SBR SUPER BARRIER RECTIFIER POWERDI Product Summary Features and Benefits Patented SBR technology provides superior avalanche V (V) I (A) V max (V) I (mA) RRM O F R max capability versus schottky diodes, ensuring more rugged and 50 20 0.52 0.5 reliable end applications. Reduced ultra-low forward voltage drop (V ) Better efficiency F and cooler operation. Reduced high temperature reverse leakage Increased reliability against thermal runaway failure in high temperature operation. <1.1mm Package Profile ideal for thin applications. Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data Packaged in the compact thermally efficient POWERDI5060-8 Case: POWERDI5060-8 package, the SBR20U50SLP provides very low V and excellent Case Material: Molded Plastic, Green Molding Compound F reverse leakage stability at high temperatures. It is ideal for use as a UL Flammability Classification Rating 94V-0 rectifier, freewheel diode or blocking diode in: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe DC-DC Converters Solderable per MIL-STD-202, Method 208 AC-DC Adaptors Polarity: See Below Weight: 0.097 grams (Approximate) POWERDI5060-8 Pin 1 A A A A Top View Bottom View C C C C Ordering Information (Note 4) Part Number Case Packaging SBR20U50SLP-13 POWERDI5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See SBR20U50SLP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 50 V V RWM DC Blocking Voltage V RM RMS Reverse Voltage V 35 V R(RMS) Average Rectified Output Current I 20 A O Non-Repetitive Peak Forward Surge Current 8.3ms 100 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 6) 30 C/W R JA Typical Thermal Resistance Junction to Case (Note 6) 5 C/W R JC Operating and Storage Temperature Range T T -55 to +125 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.48 I = 10A, T = +25C F J Forward Voltage Drop (Note 8) V V F 0.46 0.52 I = 20A, T = +25C F J 0.5 V = 50V, T = +25C R J Leakage Current (Note 8) I mA R 100 V = 50V, T = +125C R J I = 0.5A, I = 1.0A, F R Reverse Recovery Time 57 ns t rr I = 0.25A RR Total Capacitance 400 pf C V = 40V, f = 1MHz T R Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 6. Device mounted on FR4 substrate PC board with 10cm*10cm copper pad. 7. Device mounted on Aluminum substrate PC board with 2-inch sq. copper pad + additional heatsink (Al 48mm*35mm*80mm). 8. Short duration pulse test used to minimize self-heating effect. 5 100 4.5 T = 150C 10 A 4 T = 125C A 3.5 1 3 0.1 2.5 T = 85C 2 A 0.01 1.5 T = 25C A 1 0.001 T = -55C A 0.5 0 0.0001 0 5 10 15 0 100 200 300 400 500 600 I AVERAGE FORWARD CURRENT (A) V , INSTANTANEOUS FORWARD VOLTAGE (V) F(AV) F Figure 1 Forward Power Dissipation Figure 2 Typical Forward Characteristics SBR and POWERDI are registered trademarks of Diodes Incorporated. 2 of 5 SBR20U50SLP February 2015 Diodes Incorporated www.diodes.com Document number: DS36243 Rev. 3 - 2 ADVANCED INFORMATIN PF , AVERAGE FORWARD POWER (AV) DISSIPATION (W) I , INSTANTANEOUS FORWARD CURRENT (A) F