SBR2A40BLP Green 2.0A SBR BRIDGE SUPER BARRIER RECTIFIER Product Summary Features and Benefits Low Profile Package, Ideal for Thin Portable Applications V Max (V) I Max (mA) F R V (V) I (A) RRM O +25C +25C Low Reverse Leakage Ensuring Greater Stability at Higher 40 2 0.5 0.1 Temperatures Low Forward Voltage (V ) Minimizes Conduction Losses and F Improves Efficiency Patented Super Barrier Rectifier SBR Technology Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description Case: V-DFN5060-4 Packaged in the compact DFN5060-4 the SBR2A40BLP is designed Case Material: Molded Plastic Green Molding Compound. with low forward voltage and low reverse leakage to meet the needs UL Flammability Classification Rating 94V-0 of LED Lighting applications and wireless charging applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Polarity: See Diagram (-) (+) Weight: 0.0715 grams (Approximate) (~) (~) Top View Top View Bottom View Device Schematic Ordering Information (Note 4) Part Number Case Packaging SBR2A40BLP-13 V-DFN5060-4 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See SBR2A40BLP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage V 40 V RWM DC Blocking Voltage V RM Average Rectified Output Current 2.0 A IO Non-Repetitive Peak Forward Surge Current 8.3ms I 70 A FSM Single Half Sine-Wave Superimposed on Rated Load (Per Diode) Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 5) R 15 C/W JC Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition 0.50 I = 2.0A, T = +25C F J Forward Voltage (Per Diode) V V F 0.42 0.47 I = 2.0A, T = +125C F J 0.1 V = 40V, T = +25C R J Reverse Current (Note 6) (Per Diode) I mA R 10 V = 40V, T = +125C R J V = 40V, f = 1.0MHz, R Total Capacitance (Per Diode) 90 pF C T T = +25C J Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout per