SBR2M60S1FQ Green 2A SBR SUPER BARRIER RECTIFIER Product Summary ( T = +25C) Features and Benefits A Superior Reverse Avalanche Capability V (V) I (A) V Max (V) I Max (A) RRM O F R Patented Interlocking Clip Design for High Surge Current Capacity 60 2 0.70 0.8 Patented Super Barrier Rectifier SBR Technology Soft, Fast Switching Capability +175C Operation Junction Temperature Description Lead-Free Finish RoHS Compliant (Notes 1 & 2) The SBR2M60S1FQ is a single rectifier packaged in SOD123F, Halogen and Antimony Free. Green Device (Note 3) offering very low forward voltage drop (V ) and excellent low reverse F Qualified to AEC-Q101 Standards for High Reliability leakage stability at high temperatures. PPAP Capable (Note 4) Applications Mechanical Data DC-DC Converter Case: SOD123F AC-DC Rectifier Case Material: Molded Plastic, Green Molding Compound. UL Reverse Polarity Protection Flammability Classification Rating 94V-0 SMPS Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.0016 grams (Approximate) SOD123F Top View Ordering Information (Note 5) Part Number Case Packaging SBR2M60S1FQ-7 SOD123F 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See SBR2M60S1FQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 60 V V RRM DC Blocking Voltage Average Rectified Output Current I 2 A O Non-Repetitive Peak Forward Surge Current 8.3ms I 30 A FSM Thermal Characteristics Characteristic Symbol Value Unit Maximum Thermal Resistance Junction to Ambient (Note 6) R 100 C/W JA Maximum Thermal Resistance Junction to Case (Note 6) 40 C/W RJC Operating and Storage Temperature Range -65 to +175 C T T J, STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition 0.52 0.60 I = 1A, T = +25C F J Forward Voltage Drop V V F 0.60 0.70 I = 2A, T = +25C F J 0.2 0.8 A VR = 60V, TJ = +25C Leakage Current (Note 8) I R 60 A V = 60V, T = +125C R J Notes: 6. Device mounted on FR-4 substrate, 0.4 *0.5 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pad. 7. Device mounted on 1-inch FR-4. 8. Short duration pulse test used to minimize self-heating effect. 2 of 5 SBR2M60S1FQ August 2018 Diodes Incorporated www.diodes.com Document number: DS39039 Rev. 4 - 2