SBR2U100LP 1.5A SBR SUPER BARRIER RECTIFIER Product Summary Features and Benefits Low Forward Voltage Drop V (MAX) (V) I (A) F R(MAX) V (V) I (A) RRM O +25C +25C Excellent High-Temperature Stability 100 1.5 0.85 50 Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability +175 Operating Junction Temperature Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data The SBR2U100LP provides low V and excellent reverse leakage Case: X1-DFN1411-3 F stability at high temperatures. It is ideal for use as bypass diode and Case Material: Molded Plastic, Green Molding Compound rectifier, freewheel diode or blocking diode in applications such as: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe Polarity Protection Diode Solderable per MIL-STD-202, Method 208 Recirculating Diode Polarity: See Below Switching Diode Weight: 2.35 mg (Approximate) Bypass Diodes X1-DFN1411-3 2 1 3 Top View Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging SBR2U100LP-7 X1-DFN1411-3 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See SBR2U100LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage 100 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 1.5 A O Non-Repetitive Peak Forward Surge Current 8.3ms I 18 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) 100 C/W R JA Operating Temperature Range V 80% V -55 to +150 R RRM V 50% V T +175 C R RRM J DC Forward Mode (Note 6) +200 Storage Temperature Range T -55 to +175 C STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.71 0.78 I = 1A, T = +25C F J Forward Voltage Drop (Note 7) V V F 0.76 0.85 I = 1.5A, T = +25C F J 50 A V = 100V, T = +25C R J Leakage Current (Note 7) I R 60 A V = 100V, T = +125C R J Notes: 5. 1 inch sq. copper pad, 2 oz. 6. Max junction temperature guaranteed for 2 hours. 7. Short duration pulse test used to minimize self-heating effect. 1.6 10 1.4 T =175C A Note 5 1.2 T =150C A 1 1 T =85C A T =125C A 0.8 0.6 T =25C A 0.1 0.4 0.2 0 0.01 0 1 2 3 0 200 400 600 800 1000 1200 I AVERAGE FORWARD CURRENT (A) F(AV) V INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 1 Forward Power Dissipation F Figure 2 Typical Forward Characteristics 2 of 4 SBR2U100LP March 2016 Diodes Incorporated www.diodes.com Document number: DS37961 Rev. 2 - 2 NEW PROD ADVANCED INFORMATION P , AVERAGE FORWARD POWER UCT D DISSIPATION (W) I , INSTANTANEOUS FORWARD CURRENT (A) F