SBR2U60S1F Green SUPER BARRIER RECTIFIER Product Summary Features and Benefits V (V) I (A) V Max (V) +25C I Max (mA) +25C RRM O F R Guard Ring Die Construction for Transient Protection 60 2 0.51 0.15 Low Power Loss, High Efficiency Patented Interlocking Clip Design for High Surge Current Capacity Patented Super Barrier Rectifier SBR Technology Qualified to AEC-Q101 Standards for High Reliability Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) An Automotive-Compliant Part is Available Under Separate Datasheet (SBR2U60S1FQ) Description and Applications The SBR2U60S1F is a single rectifier packaged in Mechanical Data SOD123F(Standard). Offering low V , low power loss and high F efficiency, this device is ideal for use in general rectification Case: SOD123F (Standard) applications as a: Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Boost Diode Terminals: Matte Tin Finish Annealed over Copper Leadframe. Blocking Diode Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.015 grams (Approximate) SOD123F (Standard) Top View Ordering Information (Note 4) Part Number Case Packaging SBR2U60S1F-7 SOD123F (Standard) 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See SBR2U60S1F Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 60 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 2 A O Non-Repetitive Peak Forward Surge Current I 35 A FSM 8.3ms Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 5) R 30 JC C/W Typical Thermal Resistance Junction to Ambient (Note 5) 88 R JA Operating and Storage Temperature Range T , T -55 to +175 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) 60 V V I = 1.0mA (BR)R R I = 1A, T = +25C 0.37 0.46 F J Forward Voltage Drop V 0.44 0.51 V I = 2A, T = +25C F F J 0.42 I = 2A, T = +125C F J 20 A V = 10V, T = +25C R J Leakage Current (Note 6) I 50 150 A V = 60V, T = +25C R R J 6.5 mA V = 60V, T = +125C R J Total Capacitance 75 pF CT VR = 10V, f = 1MHz I = 0.5A, I = 1A, F R Reverse Recovery Time 11 ns t RR I = 0.25A RR Notes: 5. Device mounted on FR-4 substrate, 1.0 *1.0 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pad. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 SBR2U60S1F May 2018 Diodes Incorporated www.diodes.com Document number: DS38449 Rev. 4 - 2