SBR2U60S1FQ Green SUPER BARRIER RECTIFIER Product Summary Features and Benefits V Max (V) I Max (mA) F R Guard Ring Die Construction for Transient Protection V (V) I (A) RRM O +25C +25C Low Power Loss, High Efficiency 60 2 0.51 0.15 Patented Interlocking Clip Design for High Surge Current Capacity Patented Super Barrier Rectifier SBR Technology Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data The SBR2U60S1FQ is a single rectifier packaged in SOD123F. Case: SOD123F Offering low V , low power loss and high efficiency, this device is F Case Material: Molded Plastic, Green Molding Compound. UL ideal for use in general rectification applications as a: Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Boost Diode Terminals: Matte Tin Finish Annealed over Copper Leadframe. Blocking Diode Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.015 grams (Approximate) SOD123F Top View Ordering Information (Note 5) Part Number Case Packaging SBR2U60S1FQ-7 SOD123F 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See SBR2U60S1FQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 60 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 2 A O Non-Repetitive Peak Forward Surge Current I 35 A FSM 8.3ms Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 6) R 40 JC C/W Typical Thermal Resistance Junction to Ambient (Note 6) 100 R JA Operating and Storage Temperature Range T , T -55 to +175 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 8) 60 V V I = 1.0mA (BR)R R I = 1A, T = +25C 0.37 0.46 F J Forward Voltage Drop V 0.44 0.51 V I = 2A, T = +25C F F J 0.42 I = 2A, T = +125C F J 20 A V = 10V, T = +25C R J Leakage Current (Note 8) I 50 150 A V = 60V, T = +25C R R J 6.5 mA V = 60V, T = +125C R J Total Capacitance 75 pF CT VR = 10V, f = 1MHz Notes: 6. Device mounted on FR-4 substrate, 0.4 *0.5 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pad. 7. Device mounted on FR-4 substrate, 1.0 *1.0 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pad. 8. Short duration pulse test used to minimize self-heating effect. 2 of 5 SBR2U60S1FQ February 2018 Diodes Incorporated www.diodes.com Document number: DS38834 Rev. 3 - 2