SBR545SAFQ Green 5.0A SBR SURFACE MOUNT SUPER BARRIER RECTIFIER Product Summary ( T = +25C) Features A V (V) I (A) V (MAX) (V) I (mA) Patented SBR technology provides an avalanche capability five RRM O F R (MAX) 45 5 0.56 0.2 times larger than Schottky diodes ensuring more rugged and reliable end applications. Lower reverse leakage ensuring greater stability at higher temperatures. Low forward voltage (V ) minimizes conduction losses and F improving efficiency. Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data The SBR545SAFQ is a 5A 45V single rectifier packaged in the low Case: SMAF profile SMAF package. Providing low V and excellent high F Case Material: Molded Plastic, Green Molding Compound. UL temperature stability this device is ideal for use in general rectification Flammability Classification Rating 94V-0 applications such as: Moisture Sensitivity: Level 1 per J-STD-020 Boost Diode Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Blocking Diode e3 Solderable per MIL-STD-202, Method 208 Recirculating Diode Polarity: Cathode Band Weight: 0.035 grams (Approximate) SMAF Top View Ordering Information (Note 5) Part Number Compliance Case Packaging SBR545SAFQ-13 Automotive SMAF 10000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See SBR545SAFQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage V 45 V RWM DC Blocking Voltage V RM Average Rectified Output Current (See Figure 1) 5.0 A I O Non-Repetitive Peak Forward Surge Current 8.3ms I 100 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance Junction to Case (Note 6) R 20 JC C/W Thermal Resistance Junction to Ambient (Note 6) R 45 JA Operating and Storage Temperature Range -65 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.5 0.56 V I = 5.0A, T = +25C F J Forward Voltage Drop VF 0.485 V I = 5.0A, T = +125C F J 0.04 0.2 mA V = 45V, T = +25C R J Leakage Current (Note 7) I R 6 43 mA V = 45V, T = +125C R J Notes: 6. Device mounted on FR-4 substrate, 1 x 1 , 2oz, single-sided, PC boards with 0.56 x 0.73 copper pad. 7. Short duration pulse test used to minimize self-heating effect. 6.00 10 ) A ( T N E 5.00 R R U T = 125C A C D 4.00 1 R A W R T = 100C A O 3.00 T = 150C F A S U O E T = 75C 2.00 0.1 A N A T N A T 1.00 S N T = 25C A I , F I 0.01 0.00 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 o T , AMBIENT TEMPERATURE ((C)) V , INSTANTANEOUS FORWARD VOLTAGE (V) A F Figure 1 Forward Current Derating Curve Figure 2 Typical Forward Characteristics 2 of 4 SBR545SAFQ March 2019 Diodes Incorporated www.diodes.com Document number: DS41694 Rev. 1 - 2 ADVANCE INFORMATION NEW PRODUCT I , AVERAGE FORWARD CURRENT (A) F(AV) I , INSTANTANEOUS FORWARD CURRENT (A) F