SBRFP10U45D1 10A FIELD PLATED SBR FIELD PLATED SUPER BARRIER RECTIFIER Product Summary Features and Benefits Reduced Ultra Low Voltage Drop (VF). Increased Efficiency and V (V) I (A) F Max R Max V (V) I (A) RRM O Cooler Operation +25C +25C Patented Super Barrier Rectifier SBR Technology 45 10 0.50 200 Superior Avalanche Capability (See Max Ratings) Excellent Reverse Leakage (IR) Stability in High-Temperature Circumstance. Increased Reliability Against Thermal Runaway Failure in High Temperature Operation. Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), Description and Applications please contact us or your local Diodes representative. SBRFP10U45D1 Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 45 V VRWM DC Blocking Voltage V RM Average Rectified Output Current I 10 A O Non-Repetitive Peak Forward Surge Current 8.3ms 190 A IFSM Single Half Sine-Wave Superimposed on Rated Load Non-Repetitive Avalanche Energy E 590 mJ AS (T = +25, I = 4A, L=50mH) J AS Non-Repetitive Avalanche Energy 215 mJ EAS (TJ = +25, IAS = 17A, L=1mH) Electrostatic Discharge- Human Body Model HBM 4000 V Electrostatic Discharge- Contact Discharge Model CBM 1 kV Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) R 85 C/W JA Typical Thermal Resistance Junction to Ambient (Note 6) 18 C/W R JA Typical Thermal Resistance Junction to Case (Note 6) 2 C/W RJC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition IF = 1A, TJ = +25C 0.32 I = 5A, T = +25C 0.39 F J Forward Voltage Drop 0.44 0.50 V VF IF = 10A, TJ = +25C 0.32 I = 5A, T = +125C F J 0.39 0.45 I = 10A, T = +125C F J 31 200 A VR = 45V, TJ = +25C Leakage Current (Note 7) I R 13 55 mA VR = 45V, TJ = +125C Junction Capacitance CJ 450 pF VR = 45V, TJ = +25C IF = 0.5A, IRR = 1A, IRR = 0.25A Reverse Recovery Time 55 ns tRR (RG1) Notes: 5. PR-4 2oz Cu 6. With 50mm*50mm*23mm Al heatsink. 7. Short duration pulse test used to minimize self-heating effect. 2 of 6 SBRFP10U45D1 June 2020 Diodes Incorporated www.diodes.com Document number: DS42326 Rev. 3 - 2