SBRFP10U60D1 Green 10A FIELD PLATED SBR FIELD PLATED SUPER BARRIER RECTIFIER Product Summary Features and Benefits Reduced Ultra Low Voltage Drop (VF) Increased Efficiency and V (V) I (A) F Max R Max V (V) I (A) RRM O Cooler Operation +25C +25C Patented Super Barrier Rectifier SBR Technology 60 10 0.52 200 Superior Avalanche Capability (See Maximum Ratings) Excellent Reverse Leakage (I ) Stability in High-Temperature R Circumstance. Increased Reliability Against Thermal Runaway Failure in High-Temperature Operation. Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP Description and Applications capable, and manufactured in IATF 16949 certified facilities), This Super Barrier Rectifier (SBR) diode is ideally suited for please contact us or your local Diodes representative. applications requiring ultra low blocking mode. Leading to lower SBRFP10U60D1 Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 60 V VRWM DC Blocking Voltage V RM Average Rectified Output Current I 10 A O Non-Repetitive Peak Forward Surge Current 8.3ms 190 A IFSM Single Half Sine-Wave Superimposed on Rated Load (Pins 1 and 3) Non-Repetitive Avalanche Energy E 390 mJ AS (T = +25C, I = 3.5A, L=50mH) J AS Non-Repetitive Avalanche Energy EAS 175 mJ (TJ = +25C, IAS = 16A, L=1mH) Electrostatic Discharge- Human Body Model HBM 4000 V Electrostatic Discharge- Contact Discharge Model CDM 1 kV Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) R 85 C/W JA Typical Thermal Resistance Junction to Ambient (Note 6) 18 C/W R JA Typical Thermal Resistance Junction to Case (Note 6) 2 C/W RJC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition IF = 1A, TJ = +25C 0.31 I = 5A, T = +25C 0.39 F J Forward Voltage Drop 0.47 0.52 V VF IF = 10A, TJ = +25C 0.33 I = 5A, T = +125C F J 0.43 0.50 I = 10A, T = +125C F J 57 200 A VR = 60V, TJ = +25C Leakage Current (Note 7) I R 15 55 mA VR = 60V, TJ = +125C Junction Capacitance CJ 240 pF VR = 60V, TJ = +25C IF = 0.5A, IRR = 1A, IRR = 0.25A Reverse Recovery Time 50 ns tRR (RG1) Notes: 5. MRP FR-4 2oz Cu 6. 50mm 50mm 23mm Al heatsink. 7. Short duration pulse test used to minimize self-heating effect. 2 of 6 SBRFP10U60D1 June 2020 Diodes Incorporated www.diodes.com Document number: DS42285 Rev. 3 - 2