NOT RECOMMENDED FOR NEW DESIGN - SBRT15M50AP5 NO ALTERNATE PART Green 15A TrenchSBR TRENCH SUPER BARRIER RECTIFIER PowerDI5 Product Summary Features and Benefits V (V) I (mA) Excellent reverse leakage (I ) stability at higher temperatures F(MAX) R(MAX) R V (V) I (A) RRM O +25C +25C Thermally efficient package for cooler running applications 50 15 0.54 0.15 Less than 1.1mm package profile ideal for thin applications Patented Super Barrier Rectifier Technology (SBR ) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and Packaged in the compact thermally efficient PowerDI 5 package, the manufactured in IATF 16949 certified facilities), please Trench SBR SBRT15M50AP5 provides excellent low reverse leakage contact us or your local Diodes representative. stability at high temperatures. It is ideal for use as a rectification, SBRT15M50AP5 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 50 V VRRM DC Blocking Voltage Average Rectified Output Current 15 A IO Non-Repetitive Peak Forward Surge Current 8.3mS I 290 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 6) R 18 C/W JA Typical Thermal Resistance Junction to Case (Note 6) 2 C/W RJC Typical Thermal Resistance Junction to Lead (Notes 6, 7) 4 C/W RJL Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.42 0.50 I =10A, T = +25C F J 0.37 0.44 I =10A, T = +125C F J Forward Voltage Drop V V F 0.47 0.54 I =15A, T = +25C F J 0.43 0.50 I =15A, T = +125C F J V = 50V , T = +25C R J 0.1 0.15 Leakage Current (Note 8) mA IR V = 50V , T = +125C 16 45 R J Junction Capacitance 440 pF V = 25V , T = +25C CJ R J Notes: 6. Device mounted on FR4 PCB with 1inch copper pad layout with AL substrate and additional HK1(37mm x 55mm x15mm). 7. Junction to Lead (Cathode Terminal) 8. Short duration pulse test used to minimize self-heating effect. 100 8.0 7.0 10 T = 150C A 6.0 T = 125C A 5.0 1 T = 85C 4.0 A 0.1 T = 25C A 3.0 T = -55C A 2.0 0.01 1.0 0.001 0.0 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 I AVERAGE FORWARD CURRENT (A) V , INSTANTANEOUS FORWARD VOLTAGE (V) F(AV) F Figure 1 Forward Power Dissipation Figure 2 Typical Forward Characteristics 2 of 5 January 2020 SBRT15M50AP5 www.diodes.com Diodes Incorporated Document number: DS36758 Rev. 4 - 3 NEW PRODUCT ADVANCED INFORMATION P , POWER DISSIPATION (W) D I , INSTANTANEOUS FORWARD CURRENT (A) F