SBRT2M10LP
2A TrenchSBR
TRENCH SUPER BARRIER RECTIFIER
Product Summary Features and Benefits
Patented TrenchSBR technology provides superior avalanche
V (MAX) (V) I (mA)
F R(MAX)
V (V) I (A)
RRM O
@ +25C @ +25C capability versus schottky diodes, ensuring more rugged and
10 2 0.4 0.25
reliable end applications.
Reduced ultra-low forward voltage drop (V ); Better efficiency
F
and cooler operation.
Reduced high temperature reverse leakage; Increased reliability
against thermal runaway failure in high temperature operation.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications Mechanical Data
The SBRT2M10LP provides very low V and excellent reverse Case: X1-DFN1411-3
F
leakage stability at high temperatures. It is ideal for use as bypass Case Material: Molded Plastic, Green Molding Compound;
and rectifier, freewheel diode or blocking diode in applications such UL Flammability Classification Rating 94V-0
as: Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solar Panels Solderable per MIL-STD-202, Method 208
Polarity: See Below
Blocking Diodes
Weight: 2.35 mg (Approximate)
Bypass Diodes
Boost Diodes
Recirculating Diodes
X1-DFN1411-3
2
1
3
Top View
Top View
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
SBRT2M10LP-7 X1-DFN1411-3 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
SBRT2M10LP
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
V
Peak Repetitive Reverse Voltage RRM
Working Peak Reverse Voltage 10 V
V
RWM
DC Blocking Voltage
V
RM
Average Rectified Output Current I 2 A
O
Non-Repetitive Peak Forward Surge Current 8.3ms
25 A
I
FSM
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 5) 25 C/W
RJC
Typical Thermal Resistance Junction to Ambient (Note 5) 100 C/W
R
JA
-55 to +150
V 80% V
R RRM
Operating Temperature Range T +175 C
V 50% V J
R RRM
DC Forward Mode (Note 7) +200
Storage Temperature Range -55 to +150 C
T
STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop (Note 6) 0.4 V
V I = 2A, T = +25C
F F J
250 A V = 10V, T = +25C
R J
Leakage Current (Note 6)
I
R
10.8 mA
V = 10V, T = +125C
R J
Notes: 5. Device mounted on FR-4 PCB pad layout 1inch 2oz copper.
6. Short duration pulse test used to minimize self-heating effect.
7. Maximum junction temperature guaranteed for two hours.
10 100000
T = 175C
A
T =175C
A
T = 150C
A
T =150C
A
10000
1
T = 125C
A
T =125C
A
1000
0.1
T = 85C
A
T = 85C
A
T =25C 100
0.01 A
T =-55C
A T = 25C
A
10
0.001
0 1 2 3 4 5 6 7 8 9 10
0 100 200 300 400 500
V , Instantaneous Forward Voltage (mV) V , REVERSE VOLTAGE (V)
F R
Figure 1 Typical Forward Characteristics Figure 2 Typical Reverse Characteristics
2 of 5
SBRT2M10LP March 2015
Diodes Incorporated
www.diodes.com
Document number: DS37430 Rev. 8 - 2
I , INSTANTANEOUS FORWARD CURRENT (A)
F
I , LEAKAGE CURRENT (A)
R