SBRT3M40P1 3A Trench SBR Green TRENCH SUPER BARRIER RECTIFIER POWERDI 123 Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V (V) I (A) Reduced ultra-low forward voltage drop (V ) better efficiency RRM O F max R max F 40 3 0.53 30 and cooler operation. Reduced high temperature reverse leakage Increased reliability against thermal runaway failure in high temperature operation. Description <1.1mm package profile ideal for thin applications. Packaged in the compact thermally efficient POWERDI-123 package, Lead-Free Finish RoHS Compliant (Notes 1 & 2) the SBRT3M40P1 provides very low reverse leakage and excellent Halogen and Antimony Free. Green Device (Note 3) V stability at high temperatures. It is ideally suited to use as a F Qualified to AEC-Q101 Standards for High Reliability rectifier diode in MR16 bridge rectifier applications. Mechanical Data Applications Case: PowerDI123 Bridge Diodes Case Material: Molded Plastic, Green Molding Compound Blocking Diodes UL Flammability Classification Rating 94V-0 Reverse Protection Diodes Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.01 grams (Approximate) Device symbol Top View Ordering Information (Note 4) Part Number Case Packaging SBRT3M40P1-7 PowerDI-123 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See SBRT3M40P1 Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 40 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 3 A O Non-Repetitive Peak Forward Surge Current 8.3ms 70 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) 78 C/W RJA Typical Thermal Resistance Junction to Case (Note 5) 16 C/W R JC Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition I = 1A, T = +25C 0.37 0.42 F J 0.29 I = 1A, T = +125C F J Forward Voltage Drop (Note 6) V V F 0.46 0.53 I = 3A, T = +25C F J 0.41 I = 3A, T = +125C F J 8 30 A V = 40V, T = +25C R J Leakage Current (Note 6) I R 2.2 15 mA V = 40V, T = +125C R J Notes: 5. Device mounted on 1 inch FR4. 6. Short duration pulse test used to minimize self-heating effect. 1.4 100 1.2 10 1.0 T = 150C A 1 T = 125C A 0.8 T = 85C A 0.1 T = 25C A 0.6 T = -55C A 0.01 0.4 0.001 0.2 0.0 0.0001 0 0.5 1 1.5 2 2.5 3 3.5 0 100 200 300 400 500 600 700 I AVERAGE FORWARD CURRENT (A) V , INSTANTANEOUS FORWARD VOLTAGE (V) F(AV) F Figure 1 Forward Power Dissipation Figure 2 Typical Forward Characteristics SBR and POWERDI are registered trademarks of Diodes Incorporated. 2 of 5 SBRT3M40P1 December 2014 Diodes Incorporated www.diodes.com Document number: DS36267 Rev. 5 - 2 AADDVVAANNNCCEEWE ID NP FIRNOOFRDOMURACMTTAI OTNIO N P , AVERAGE FORWARD D POWER DISSIPATION (W) I , INSTANTANEOUS FORWARD CURRENT (A) F