NOT RECOMMENDED FOR NEW DESIGN CONTACT US SBRT3M60SA Green 3A TrenchSBR TRENCH SUPER BARRIER RECTIFIER Product Summary Features and Benefits V (MAX) (V) I (mA) F R(MAX) Reduced reverse leakage (I ) and low forward voltage drop (VF) R V (V) I (A) RRM O +25C +25C better efficiency and cooler operation. 60 3 0.59 0.1 Reduced high temperature reverse leakage Increased reliability against thermal runaway failure in high temperature operation. Patented TrenchSBR Technology Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP The SBRT3M60SA is a 3A 60V single rectifier packaged in the low capable, and manufactured in IATF 16949 certified profile SMA package. Providing low V and excellent reverse leakage F facilities), please contact us or your local Diodes stability at high temperatures, this device is ideal for use in general representative. rectification applications such as: SBRT3M60SA Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 60 V VRWM DC Blocking Voltage V RM Average Rectified Output Current I 3 A O Non-Repetitive Peak Forward Surge Current 8.3ms 50 A IFSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) R 90 C/W JA Typical Thermal Resistance Junction to Case (Note 5) 33 C/W RJC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.59 IF = 3A, TJ = +25C Forward Voltage Drop V VF 0.57 I = 3A, T = +125C F J 0.1 V = 60V, T = +25C R J Leakage Current (Note 6) mA IR 10 VR = 60V, TJ = +125C Notes: 5. Device mounted on FR-4 substrate, 0.4 *0.5 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pad. 6. Short duration pulse test used to minimize self-heating effect. 1.6 3.50 1.4 3.00 1.2 2.50 T =150 J 1 Note 5 2.00 0.8 1.50 0.6 1.00 0.4 0.50 0.2 0 0.00 0 1 2 3 4 25 50 75 100 125 150 175 I , AVERAGE FORWARD CURRENT (A) T , AMBIENT TEMPERATURE ( ) F(AV) A Figure 2. Forward Power Dissipation Figure 1. DC Forward Current Derating 2 of 5 April 2021 SBRT3M60SA Diodes Incorporated www.diodes.com Document number: DS37696 Rev. 4 - 3 AADDVVAANNNCCEEWE ID NP FIRNOOFRDOMURACMTTAI OTNIO N I , DC FORWARD CURRENT (A) F P , AVERAGE FORWARD POWER F(AV) DISSIPATION (W)