SBRT3U60P1
Green
3A Trench SBR
TRENCH SUPER BARRIER RECTIFIER
POWERDI
Product Summary (@T = +25C) Features and Benefits
A
V (V) I (A) V max (V) I max (mA) Reduced Ultra-low Forward Voltage Drop (V ); Better Efficiency
RRM O F R F
60 3 0.56 0.15
and Cooler Operation
Reduced High Temperature Reverse Leakage; Increased
Reliability against Thermal Runaway Failure in High
Temperature Operation
Patented Trench Super Barrier Rectifier SBR Technology
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Application
Packaged in the compact thermally efficient POWERDI 123 package,
Mechanical Data
the SBRT3U60P1 provides very low reverse leakage and excellent V
F
stability at high temperatures. It is ideally suited to use as a rectifier
Case: POWERDI 123
diode in MR16 bridge rectifier applications.
Case Material: Molded Plastic, Green Molding Compound; UL
Flammability Classification Rating 94V-0
Bridge Diodes
Moisture Sensitivity: Level 1 per J-STD-020
Blocking Diodes
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Reverse Protection Diodes
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.01 grams (Approximate)
Top View Device Symbol
Ordering Information (Note 4)
Part Number Case Packaging
SBRT3U60P1-7 POWERDI 123 3,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
SBRT3U60P1
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
V
Peak Repetitive Reverse Voltage RRM
Working Peak Reverse Voltage 60 V
VRWM
DC Blocking Voltage
V
RM
Average Rectified Output Current I 3 A
O
Non-Repetitive Peak Forward Surge Current 8.3ms
70 A
I
FSM
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 5) R 53 C/W
JA
Typical Thermal Resistance Junction to Case (Note 5) R 2.1 C/W
JC
Operating and Storage Temperature Range -65 to +150 C
T , T
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
0.47 0.56 I = 3A, T = +25C
F J
Forward Voltage Drop (Note 6) V V
F
0.52
I = 3A, T = +125C
F J
0.15 V = 60V, T = +25C
R J
Leakage Current (Note 6) mA
I
R
30
V = 60V, T = +125C
R J
Notes: 5. Device mounted on 1inch sq. copper pad,2oz.
6. Short duration pulse test used to minimize self-heating effect.
10 100000
T = 150C
A
10000
T = 125C
A
1000
1
T = 85C
A
150
100
10
125
T = 25C
A
0.1
85 1
25
0.1
-55
T = -55C
A
0.01 0.01
0 10 20 30 40 50 60
0 100 200 300 400 500 600
V , REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
Figure 2 Typical Reverse Characteristics
Figure 1 Typical Forward Characteristics
SBR and POWERDI are registered trademarks of Diodes Incorporated.
2 of 5
SBRT3U60P1 December 2015
Diodes Incorporated
www.diodes.com
Document number: DS37760 Rev. 3 - 2
ADVANCED INFORMATION
AADDVVAANNNCCENEWE EID NWP FI RNPOORFRDOOMURDACMUTTCAI OTTN IO N
I , INSTANTANEOUS FORWARD CURRENT (A)
F
I , LEAKAGE CURRENT (A)
R