NOT RECOMMENDED FOR NEW DESIGN - SBRT4U10LP CONTACT US 4A TrenchSBR TRENCH SUPER BARRIER RECTIFIER Product Summary Features and Benefits Patented TrenchSBR technology provides superior avalanche V (MAX) (V) I (mA) F R(MAX) V (V) I (A) RRM O +25C +25C capability versus Schottky diodes, ensuring more rugged and 10 4 0.5 0.2 reliable end applications Reduced ultra-low forward voltage drop (V ). F Better efficiency and cooler operation Reduced high temperature reverse leakage. Increased reliability against thermal runaway failure in high temperature operation Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data The SBRT4U10LP provides very low V and excellent reverse Case: U-DFN2020-2 (Type B) F leakage stability at high temperatures. It is ideal for use as bypass Case Material: Molded Plastic, Green Molding Compound. diode and rectifier, freewheel diode or blocking diode in applications UL Flammability Classification Rating 94V-0 such as: Moisture Sensitivity: Level 1 per J-STD-020 Solar Panels Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Blocking Diode Solderable per MIL-STD-202, Method 208 s Bypass Diode Polarity: See Below Boost Diode Weight: 6.757mg (Approximate) Recirculating Diode U-DFN2020-2 (Type B ) Top View Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging SBRT4U10LP-7 U-DFN2020-2 (Type B) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See SBRT4U10LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage 10 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 4 A O Non-Repetitive Peak Forward Surge Current 8.3ms I 35 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 5) 6 C/W R JC Typical Thermal Resistance Junction to Ambient (Note 5) 65 C/W R JA -55 to +150 Operating Temperature Range V 80% V R RRM +175 C V 50% V TJ R RRM DC Forward Mode (Note 7) +200 Storage Temperature Range T -55 to +150 C STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage Drop (Note 6) V 0.500 V I = 4A, T = +25C F F J 200 A V = 10V, T = +25C R J Leakage Current (Note 6) I R 6.5 mA V = 10V, T = +125C R J Notes: 5. Device mounted on FR4 PCB pad layout 1inch 2oz copper 6. Short duration pulse test used to minimize self-heating effect. 7. Max junction temperature guaranteed for two hours. 10 100000 T =150C T = 175C A A T = 150C A 10000 1 T = 125C A T =175C A 1000 0.1 T = 85C A 100 T =125C A 0.01 10 T =85C A T = 25C A 1 0.001 0.1 0.0001 T =25C A 0.01 0.00001 0.001 0 100 200 300 400 500 600 0 2 4 6 8 10 V , INSTANTANEOUS FORWARD VOLTAGE (mV) V , REVERSE VOLTAGE (V) F R Figure 2 Typical Reverse Characteristics Figure 1 Typical Forward Characteristics 2 of 5 April 2021 SBRT4U10LP Diodes Incorporated www.diodes.com Document number: DS37342 Rev. 5 - 3 I , INSTANTANEOUS FORWARD CURRENT (A) F I , LEAKAGE CURRENT (A) R