NOT RECOMMENDED FOR NEW DESIGN - CONTACT US SBRT4U15LP 4A TrenchSBR TRENCH SUPER BARRIER RECTIFIER Product Summary Features and Benefits Patented TrenchSBR technology provides superior avalanche V (V) I (mA) F(MAX) R(MAX) V (V) I (A) RRM O +25C +25C capability versus schottky diodes, ensuring more rugged and 15 4 0.48 0.1 reliable end applications. Reduced ultra-low forward voltage drop (V ) Better efficiency F Description and Applications and cooler operation. Reduced high temperature reverse leakage and increased The SBRT4U15LP provides very low V and excellent reverse F reliability against thermal runaway failure in high temperature leakage stability at high temperatures. It is ideal for use as bypass operation. diode and rectifier, freewheel diode or blocking diode in applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) such as: Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Solar Panels Blocking Diode Mechanical Data Bypass Diode Case: U-DFN2020-2 (Type B) Boost Diode Case Material: Molded Plastic, Green Molding Compound Recirculating Diode UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Polarity: See Below Weight: 6.757 mg (Approximate) U-DFN2020-2 (Type B) Top View Bottom View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging SBRT4U15LP-7 U-DFN2020-2 (Type B) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See SBRT4U15LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage 15 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 4 A O Non-Repetitive Peak Forward Surge Current 8.3ms I 35 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 5) R 6 C/W JC Typical Thermal Resistance Junction to Ambient (Note 5) 65 C/W RJA Operating Temperature Range V 80% V -55 to +150 R RRM T +175 C V 50% V J R RRM +200 DC Forward Mode (Note 7) Storage Temperature Range T -55 to +150 C STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage Drop (Note 6) V 0.47 V I = 4A, T = +25C F F J V = 15V, T = +25C 100 A R J Leakage Current (Note 6) I R 6.2 mA V = 15V, T = +125C R J Notes: 5. Device mounted on FR-4 PCB pad layout 1-inch 2oz copper. 6. Short duration pulse test used to minimize self-heating effect. 7. Max junction temperature guaranteed for two hours. 10 100000 T =150C A T = 175C A T = 150C 10000 A 1 T =175C A T = 125C A 1000 0.1 T = 85C T =125C A A 100 0.01 10 T = 25C T =85C A A 1 0.001 0.1 0.0001 T =25C A 0.01 0.00001 0 100 200 300 400 500 600 0.001 0 5 10 15 V , INSTANTANEOUS FORWARD VOLTAGE (mV) F V , REVERSE VOLTAGE (V) R Figure 1 Typical Forward Characteristics Figure 2 Typical Reverse Characteristics 2 of 5 April 2021 SBRT4U15LP Diodes Incorporated www.diodes.com Document number: DS37652 Rev. 4 - 3 ADVANNECWE PDR IODNFORMATION I , INSTANTANEOUS FORWARD CURRENT (A) F I , LEAKAGE CURRENT (A) R