SBRT4U30LP 4A TrenchSBR TRENCH SUPER BARRIER RECTIFIER Product Summary Features and Benefits Patented TrenchSBR technology provides superior avalanche V (MAX) (V) I (mA) F R(MAX) V (V) I (A) RRM O capability versus schottky diodes, ensuring more rugged and +25C +25C 30 4 0.5 0.1 reliable end applications. Reduced ultra-low forward voltage drop (V ). Better efficiency F and cooler operation. Reduced high temperature reverse leakage. Increased reliability against thermal runaway failure in high temperature operation. Totally Lead-free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data The SBRT4U30LP provides very low V and excellent reverse F Case: U-DFN2020-2 (Type B) leakage stability at high temperatures. It is ideal for use as bypass Case Material: Molded Plastic, Green Molding Compound diode and rectifier, freewheel diode or blocking diode in applications UL Flammability Classification Rating 94V-0 such as: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solar Panels Solderable per MIL-STD-202, Method 208 Blocking Diode Polarity: See Below Bypass Diode Weight: 6.757 mg (Approximate) Boost Diode Recirculating Diode U-DFN2020-2 (Type B) Top View Bottom View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging SBRT4U30LP-7 U-DFN2020-2 (Type B) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See SBRT4U30LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 30 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 4 A O Non-Repetitive Peak Forward Surge Current 8.3ms 45 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 5) 5 C/W R JC Typical Thermal Resistance Junction to Ambient (Note 5) 65 C/W R JA -55 to +150 V 80% V R RRM Operating Temperature Range +175 C V 50% V T R RRM J DC Forward Mode (Note 7) +200 Storage Temperature Range -55 to +150 C T STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage Drop (Note 6) V 0.5 V I = 4A, T = +25C F F J 100 A V = 30V, T = +25C R J Leakage Current (Note 6) I R 5 mA V = 30V, T = +125C R J Notes: 5. Device mounted on FR-4 PCB pad layout 1-inch 2oz copper. 6. Short duration pulse test used to minimize self-heating effect. 7. Maximum junction temperature guaranteed for two hours. 100000 10 175 10000 1 175 125 150 1000 85 100 150 0.1 10 25 125 1 0.01 85 0.1 25 0.001 0.01 0 5 10 15 20 25 30 0 100 200 300 400 500 600 V , REVERSE VOLTAGE (V) R V , INSTANTANEOUS FORWARD VOLTAGE (mV) F Figure 2. Typical Reverse Characteristics Figure 1. Typical Forward Characteristics 2 of 5 SBRT4U30LP March 2015 Diodes Incorporated www.diodes.com Document number: DS37464 Rev. 6 - 2 NEW PROD ADVANCED INFORMATION I , INSTANTANEOUS FORWARD CURRENT (A) F I , LEAKAGE CURRENT (A) R