SBRT4U45LP 4A TrenchSBR TRENCH SUPER BARRIER RECTIFIER Product Summary Features and Benefits Patented TrenchSBR technology provides superior avalanche V (V) I (mA) F(MAX) R(MAX) V (V) I (A) RRM O +25C +25C capability versus schottky diodes, ensuring more rugged and 45 4 0.52 0.1 reliable end applications. Reduced ultra-low forward voltage drop (V ) Better efficiency F and cooler operation. Reduced high temperature reverse leakage. Increased reliability against thermal runaway failure in high temperature operation. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications The SBRT4U45LP provides very low V and excellent reverse Case: U-DFN2020-2 (Type B) F leakage stability at high temperatures. It is ideal for use as bypass Case Material: Molded Plastic, Green Molding Compound diode and rectifier, freewheel diode or blocking diode in applications UL Flammability Classification Rating 94V-0 such as: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Solar Panels Polarity: See Below Blocking Diode Weight: 6.757 mg (Approximate) Bypass Diode Boost Diode Recirculating Diode U-DFN2020-2 (Type B) Top View Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging SBRT4U45LP-7 U-DFN2020-2 (Type B) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See SBRT4U45LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 45 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 4 A O Non-Repetitive Peak Forward Surge Current 8.3ms 45 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 5) R 5 C/W JC Typical Thermal Resistance Junction to Ambient (Note 5) R 65 C/W JA Operating Temperature Range V 80% V -55 to +150 R RRM T +175 C V 50% V J R RRM +200 DC Forward Mode (Note 7) Storage Temperature Range T -55 to +150 C STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage Drop (Note 6) V 0.52 V I = 4A, T = +25C F F J 100 A V = 45V, T = +25C R J Leakage Current (Note 6) I R 4.7 mA V = 45V, T = +125C R J Notes: 5. Device mounted on FR-4 PCB pad layout 1-inch 2oz copper. 6. Short duration pulse test used to minimize self-heating effect. 7. Max junction temperature guaranteed for two hours. 2 of 5 SBRT4U45LP March 2015 Diodes Incorporated www.diodes.com Document number: DS37472 Rev. 6 - 2 ADVAADNVCANENEDCW EI NPDFR IOONRDFMOARTMIAOTNI ON